IRFZ48NLPBF Todos los transistores

 

IRFZ48NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ48NLPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 130 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 64 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 81 nC

Tiempo de elevación (tr): 78 nS

Conductancia de drenaje-sustrato (Cd): 470 pF

Resistencia drenaje-fuente RDS(on): 0.014 Ohm

Empaquetado / Estuche: TO-262

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IRFZ48NLPBF Datasheet (PDF)

1.1. irfz48nlpbf.pdf Size:301K _update

IRFZ48NLPBF
IRFZ48NLPBF

 IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET® Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014Ω Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S

3.1. irfz48npbf.pdf Size:226K _update

IRFZ48NLPBF
IRFZ48NLPBF

PD - 94991B IRFZ48NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 14mΩ G l Fully Avalanche Rated l Lead-Free ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

3.2. irfz48n 1.pdf Size:53K _philips

IRFZ48NLPBF
IRFZ48NLPBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

 3.3. irfz48n.pdf Size:102K _international_rectifier

IRFZ48NLPBF
IRFZ48NLPBF

PD - 91406 IRFZ48N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

3.4. irfz48n 1.pdf Size:53K _international_rectifier

IRFZ48NLPBF
IRFZ48NLPBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

 3.5. irfz48ns.pdf Size:131K _international_rectifier

IRFZ48NLPBF
IRFZ48NLPBF

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre

3.6. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ48NLPBF
IRFZ48NLPBF

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

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