IRFZ48RPBF Todos los transistores

 

IRFZ48RPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ48RPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 190 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 110 nC

Tiempo de elevación (tr): 250 nS

Conductancia de drenaje-sustrato (Cd): 1300 pF

Resistencia drenaje-fuente RDS(on): 0.018 Ohm

Empaquetado / Estuche: TO-220AB

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IRFZ48RPBF Datasheet (PDF)

1.1. irfz48r irfz48rpbf.pdf Size:1061K _update

IRFZ48RPBF
IRFZ48RPBF

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.018 • Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 29 • Fully Avalanche Rated Qgd (nC) 36 • Drop in Replacement of the SiH

3.1. irfz48rl irfz48rlpbf irfz48rs irfz48rspbf.pdf Size:228K _update

IRFZ48RPBF
IRFZ48RPBF

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Dynamic dV/dt Qg (Max.) (nC) 110 • 175 °C Operating Temperature Qgs (nC) 29 • Fast Switching Qgd (nC) 36 • Fully Avalanche Rated Configuration Si

3.2. irfz48r.pdf Size:136K _international_rectifier

IRFZ48RPBF
IRFZ48RPBF

PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.018? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ48 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

 3.3. irfz48rspbf irfz48rlpbf.pdf Size:262K _international_rectifier

IRFZ48RPBF
IRFZ48RPBF

PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018? l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize

3.4. irfz48r sihfz48r.pdf Size:1059K _vishay

IRFZ48RPBF
IRFZ48RPBF

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiHFZ48 for Linear/Aud

 3.5. irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf Size:203K _vishay

IRFZ48RPBF
IRFZ48RPBF

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) (?)VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Single Drop in Re

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