IRFZ48S Todos los transistores

PD - 9.894A IRFZ48S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175 C Operating Temperature RDS(on) = 0.018 Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

PD - 9.894A IRFZ48S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175 C Operating Temperature RDS(on) = 0.018 Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S) Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L) Qgs (nC) 29 175 C Operating Temperature Qgd (nC)

IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175 C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014 Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S

PD - 97732 AUTOMOTIVE GRADE AUIRFZ48N HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 11m l Dynamic dv/dt Rating G l 175 C Operating Temperature max 14m l Fast Switching S ID 69A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Desc

PD - 94992A IRFZ48VPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 12m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 72A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced pro

PD - 94956 IRFZ48PbF Lead-Free 1/29/04 Document Number 91294 www.vishay.com 1 IRFZ48PbF Document Number 91294 www.vishay.com 2 IRFZ48PbF Document Number 91294 www.vishay.com 3 IRFZ48PbF Document Number 91294 www.vishay.com 4 IRFZ48PbF Document Number 91294 www.vishay.com 5 IRFZ48PbF Document Number 91294 www.vishay.com 6 IRFZ48PbF TO-220AB Package Outline

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-s

PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature V(BR)DSS 55V l Fast Switching l Repetitive Avalanche Allowed up RDS(on) max. 11m G to Tjmax l Lead-Free, RoHS Compliant ID 61A S l Automotive Qualified * Description Specifically designed for Automot

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014 Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achie

PD - 91406 IRFZ48N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 14m Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature V(BR)DSS 55V l Fast Switching l Repetitive Avalanche Allowed up RDS(on) max. 11m G to Tjmax l Lead-Free, RoHS Compliant ID 61A S l Automotive Qualified * Description Specifically designed for Automot

PD - 94991B IRFZ48NPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 14m G l Fully Avalanche Rated l Lead-Free ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

PD - 94051A IRFZ48VS HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 12m G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to a

IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175 C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014 Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S

PD - 95573 IRFZ48VSPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 60V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 12m G l Fully Avalanche Rated l Optimized for SMPS Applications ID = 72A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced proc

PD - 93959A IRFZ48V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 12m G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018 l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier

PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.018 G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ48 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize a

PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 11m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 61A S Description This HEXFET Power MOSFET utilizes the latest processing techniques

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-s

IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.018 RoHS* Ultra Low On-Resistance COMPLIANT Qg (Max.) (nC) 110 Very Low Thermal Resistance Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Fast Switching Configuration Single E

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiH

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiH

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si

IRFZ48N N-Ch 60V Fast Switching MOSFETs Super Low Gate Charge Product Summary 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 60V 12m 60A technology Description TO220 Pin Configuration The IRFZ48N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSO

IRFZ48VPBF www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

IRFZ48NP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

IRFZ48RSP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sourc

isc N-Channel MOSFET Transistor IRFZ48NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z IIRFZ48Z FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES Drain Current ID= 64A@ TC=25 Drain Source Voltage- VDSS= 55V(Min) Static Drain-Source On-Resistance RDS(on) = 0.014 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

isc N-Channel MOSFET Transistor IRFZ48VS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48V IIRFZ48V FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

Isc N-Channel MOSFET Transistor IRFZ48ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

isc N-Channel MOSFET Transistor IRFZ48 FEATURES Static drain-source on-resistance RDS(on) 35m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION DC/DC Converter Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P