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IRFZ48ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ48ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 91 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 61 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 43 nC

Tiempo de elevación (tr): 69 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: TO-220AB

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IRFZ48ZPBF Datasheet (PDF)

1.1. irfz48zlpbf irfz48zpbf irfz48zspbf.pdf Size:376K _update

IRFZ48ZPBF
IRFZ48ZPBF

PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 11mΩ Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 61A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques

3.1. auirfz48zstrl.pdf Size:252K _international_rectifier

IRFZ48ZPBF
IRFZ48ZPBF

PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature V(BR)DSS 55V l Fast Switching l Repetitive Avalanche Allowed up RDS(on) max. 11m Ω G to Tjmax l Lead-Free, RoHS Compliant ID 61A S l Automotive Qualified * Description Specifically designed for Automot

3.2. irfz48zs.pdf Size:258K _inchange_semiconductor

IRFZ48ZPBF
IRFZ48ZPBF

Isc N-Channel MOSFET Transistor IRFZ48ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 3.3. irfz48z.pdf Size:246K _inchange_semiconductor

IRFZ48ZPBF
IRFZ48ZPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z, IIRFZ48Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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