IRHF57234SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHF57234SE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 155 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Paquete / Cubierta: TO-39
Búsqueda de reemplazo de IRHF57234SE MOSFET
IRHF57234SE Datasheet (PDF)
irhf57234se.pdf

PD-93831BRADIATION HARDENED IRHF57234SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42 5.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single
irhf57230se.pdf

PD - 93857ARADIATION HARDENED IRHF57230SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24 7.0ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for Si
irhf57230.pdf

PD - 93788ARADIATION HARDENED IRHF57230POWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3ATO-39International Rectifiers R5TM technology provides
irhf57214se.pdf

PD-97063ARADIATION HARDENED IRHF57214SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57214SE 100K Rads (Si) 1.55 2.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single
Otros transistores... IRFZ48RSPBF , IRFZ48S , IRFZ48VSPBF , IRFZ48ZLPBF , IRFZ48ZPBF , IRFZ48ZSPBF , IRHF57214SE , IRHF57230 , K3569 , IRHF597110 , IRHF597130 , IRHF597230 , IRHF67230 , IRHF7110 , STF12N120K5 , STF12N50M2 , STF12N60M2 .
History: QM3006U1 | VSO008N10MS | SRC65R085B | VS4610AZ | OSG55R380PF | FDFMJ2P023Z | AP9T16GJ
History: QM3006U1 | VSO008N10MS | SRC65R085B | VS4610AZ | OSG55R380PF | FDFMJ2P023Z | AP9T16GJ



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