IRHF597130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHF597130
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 318 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Paquete / Cubierta: TO-39
Búsqueda de reemplazo de MOSFET IRHF597130
IRHF597130 Datasheet (PDF)
irhf597130.pdf
PD-96963RADIATION HARDENED IRHF597130POWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF597130 100K Rads (Si) 0.24 -6.7A IRHF593130 300K Rads (Si) 0.24 -6.7A TO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli-n Single Event
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irhf597230.pdf
PD - 94450RADIATION HARDENED IRHF597230POWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF597230 100K Rads (Si) 0.54 -4.5A IRHF593230 300K Rads (Si) 0.54 -4.5AT0-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. These devices have
irhf57133se.pdf
PD - 94334ARADIATION HARDENED IRHF57133SEPOWER MOSFET130V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57133SE 100K Rads (Si) 0.1 10.5ATO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardenedcations. These dev
irhf57214se.pdf
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irhf57z30.pdf
PD - 93793ARADIATION HARDENED IRHF57Z30POWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57Z30 100K Rads (Si) 0.045 12A* IRHF53Z30 300K Rads (Si) 0.045 12A* IRHF54Z30 600K Rads (Si) 0.045 12A* IRHF58Z30 1000K Rads (Si) 0.056 12A*TO-39International Rectifiers R5TM technology provid
irhf57034.pdf
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irhf57130.pdf
PD - 93789ARADIATION HARDENED IRHF57130POWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57130 100K Rads (Si) 0.08 11.7A IRHF53130 300K Rads (Si) 0.08 11.7A IRHF54130 600K Rads (Si) 0.08 11.7A IRHF58130 1000K Rads (Si) 0.10 11.7ATO-39International Rectifiers R5TM technology provides
irhf57234se.pdf
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irhf57230se.pdf
PD - 93857ARADIATION HARDENED IRHF57230SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24 7.0ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for Si
irhf57230.pdf
PD - 93788ARADIATION HARDENED IRHF57230POWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3ATO-39International Rectifiers R5TM technology provides
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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