IRHF7110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHF7110
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO-39

Búsqueda de reemplazo de MOSFET IRHF7110

IRHF7110 Datasheet (PDF)

..1. Size:449K international rectifier
irhf7110.pdf

PD - 90671DIRHF7110IRHF7110IRHF7110RADIATION HARDENED IRHF7110RADIATION HARDENED IRHF7110RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

8.1. Size:440K international rectifier
irhf7130.pdf

PD - 90653DIRHF7130IRHF7130IRHF7130IRHF7130IRHF7130RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDJANSR2N7261JANSR2N7261JANSR2N7261JANSR2N7261JANSR2N7261POWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELTHRU-HOLE (TO-

9.1. Size:36K international rectifier
irhf7310se.pdf

Provisional Data Sheet No. PD-9.1444AREPETITIVE AVALANCHE AND dv/dt RATED IRHF7310SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARD 400 Volt, 4.5, (SEE) RAD HARD HEXFET Product SummaryInternational Rectifiers (SEE) RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate virtual immunity to SEE fail- IRHF7310SE 400V 4.5 1.15A

9.2. Size:36K international rectifier
irhf7310.pdf

Provisional Data Sheet No. PD-9.1444REPETITIVE AVALANCHE AND dv/dt RATED IRHF7310SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARD 400 Volt, 4.5, (SEE) RAD HARD HEXFET Product SummaryInternational Rectifiers (SEE) RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate virtual immunity to SEE fail- IRHF7310SE 400V 4.5 1.15A

9.3. Size:258K international rectifier
irhf7330se.pdf

PD - 91864AIRHF7330SEIRHF7330SEIRHF7330SEIRHF7330SEIRHF7330SEJANSR2N7463T2JANSR2N7463T2JANSR2N7463T2JANSR2N7463T2JANSR2N7463T2RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED400V, N-CHANNEL400V, N-CHANNEL400V, N-CHANNEL400V, N-CHANNEL400V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MO

9.4. Size:279K international rectifier
irhf7230.pdf

PD - 90672DIRHF7230RADIATION HARDENED JANSR2N7262POWER MOSFET 200V, N-CHANNELREF: MIL-PRF-19500/601THRU-HOLE (TO-39)RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF7230 100K Rads (Si) 0.35 5.5A JANSR2N7262 IRHF3230 300K Rads (Si) 0.35 5.5A JANSF2N7262 IRHF4230 600K Rads (Si) 0.35 5.5A JANSG2N7262 IRHF82

9.5. Size:126K international rectifier
irhf7430se.pdf

PD - 91863BIRHF7430SEJANSR2N7464T2500V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/676POWER MOSFETRAD Hard HEXFET TECHNOLOGYTHRU-HOLE (TO-39)Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHF7430SE 100K Rads (Si) 1.65 2.6A JANSR2N7464T2TO-39International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance

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