STF12NK80Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STF12NK80Z
Código: 12NK80Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 87 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de MOSFET STF12NK80Z
STF12NK80Z Datasheet (PDF)
stb12nk80zt4 stf12nk80z.pdf
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80ZN-channel 800 V, 0.65 typ., 10.5 A Zener-protected SuperMESHPower MOSFET in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeaturesTABVDSS Type RDS(on) ID PW(@Tjmax)313STB12NK80Z 800V
stf12nk65z.pdf
STF12NK65Z N-channel 650 V, 0.6 typ., 10 A SuperMESH Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF12NK65Z 650 V 0.7 10 A 35 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Applications TO-220FP Switching applications Figure
stp12nk60z stf12nk60z stw12nk60z.pdf
STP12NK60ZSTF12NK60Z, STW12NK60ZN-channel 650 V @Tjmax, 0.53 , 10 A TO-220, TO-220FP, TO-247Zener-protected SuperMESH Power MOSFETFeaturesVDSS RDS(on) Type ID PW(@Tjmax) max332STP12NK60Z 650 V
stf12n50u.pdf
STF12N50UN-channel 500 V, 0.55 , 10 A TO-220FPUltrafast MESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF12N50U 500 V
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5
stf12n120k5 stfw12n120k5.pdf
STF12N120K5, STFW12N120K5N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeatures Order code VDS RDS(on) max. ID PTOTSTF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W111 Industrys lowest RDS(on) x area3321 2 Industrys best figure of merit (FoM) 1TO-220FP Ultra
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5
stb12nm50nd std12nm50nd stf12nm50nd.pdf
STB12NM50NDSTD12NM50ND, STF12NM50NDN-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET(with fast diode) in D2PAK, DPAK, TO-220FPFeatures Type VDSS (@Tjmax) RDS(on) max IDSTB12NM50ND 550 V 0.38 11 ASTD12NM50ND 550 V 0.38 11 ASTF12NM50ND 550 V 0.38 11 A33 3211 1 100% avalanche testedD2PAK DPAK TO-220FP Low input capacitance and gate charge
stf12n50m2.pdf
STF12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTF12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation32 Low gate input resistance1 100% avalanche testedTO-220FP Zener-protectedAppli
stf12n60m2.pdf
STF12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switch
std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf
STD12N65M5, STF12N65M5, STI12N65M5STP12N65M5, STU12N65M5N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFETDPAK, I2PAK, TO-220FP, TO-220, IPAKFeaturesVDSS @ RDS(on) Type ID PTOT3TJmax max231 21STD12N65M5 8.5 A 70 WIPAK TO-220STF12N65M5 8.5 A(1) 25 W3STI12N65M5 710 V
stb12nm60n-1 stb12nm60n stf12nm60n stp12nm60n stw12nm60n.pdf
STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf
STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V
stf12n65m2.pdf
STF12N65M2N-channel 650 V, 0.42 typ., 8 A MDmesh M2Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTF12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested3 2 Zener-protected1 ApplicationsTO-220FP Switching applicationsFigure
stf12n120k5.pdf
STF12N120K5, STFW12N120K5N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeatures Order code VDS RDS(on) max. ID PTOTSTF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W111 Industrys lowest RDS(on) x area3321 2 Industrys best figure of merit (FoM) 1TO-220FP Ultra
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918