STF150N10F7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STF150N10F7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 57 nS
Cossⓘ - Capacitancia de salida: 1510 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Encapsulados: TO-220FP
Búsqueda de reemplazo de STF150N10F7 MOSFET
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STF150N10F7 datasheet
..1. Size:776K st
stf150n10f7.pdf 
STF150N10F7 N-channel 100 V, 0.0036 typ., 65 A, STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 65 A 35 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 3 2 Low Crss/Ciss ratio for EMI immunity 1 High avalanche ruggedness TO-220FP Applic
9.1. Size:504K st
stb15nm65n sti15nm65n stf15nm65n stp15nm65n stw15nm65n.pdf
STF15NM65N-STI15NM65N-STW15NM65N STB15NM65N-STP15NM65N N-channel 650V - 0.25 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) Max ID (@Tjmax) 3 2 3 1 2 1 STB15NM65N 710 V
9.2. Size:140K st
2stn1550 2stf1550.pdf
2STF1550 2STN1550 Low voltage high performance NPN power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic 4 Fast switching speed 4 Surface mounting devices in medium power 3 3 2 SOT-89 and SOT-223 packages 2 1 1 Applications SOT-223 SOT-89 Emergency lighting LED Motherboard an
9.3. Size:100K st
2stf1525.pdf
2STF1525 Low voltage high performance NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic 4 Fast switching speed 3 2 1 Applications Emergency lighting SOT-89 LED drive Motherboard and hard disk drive Mobile equipment DC-DC converter, voltage regulation Figure 1. Internal schematic diagram
9.4. Size:139K st
2stf1550 2stn1550.pdf
2STF1550 2STN1550 Low voltage high performance NPN power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic 4 Fast switching speed 4 Surface mounting devices in medium power 3 3 2 SOT-89 and SOT-223 packages 2 1 1 Applications SOT-223 SOT-89 Emergency lighting LED Motherboard an
9.5. Size:593K st
stb15nm60nd stf15nm60nd sti15nm60nd stp15nm60nd stw15nm60nd.pdf
STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS (@Tjmax)RDS(on) max ID 3 3 STB15NM60ND 14 A 2 1 1 STF15NM60ND 14 A D2PAK I PAK STI15NM60ND 650 V 0.299 14 A(1) 3 2 1 STP15NM60ND 14 A STW15NM60ND 14 A TO-247 1. Limited only by maximum temperature
9.6. Size:1735K st
stb15n80k5 stf15n80k5 stp15n80k5 stw15n80k5.pdf
STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 N-channel 800 V, 0.3 typ., 14 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order code VDS RDS(on)max ID PTOT 3 STB15N80K5 190 W 1 3 2 STF15N80K5 35 W D2PAK 1 800 V 0.375 14 A TO-220FP STP15N80K5 190 W TAB STW15N80K5 Industry s lowest RDS(on)
9.8. Size:496K st
stf15n60m2-ep stfi15n60m2-ep.pdf
STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and I PAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching
9.9. Size:1252K st
stf15n95k5 stp15n95k5 stw15n95k5.pdf
STF15N95K5, STP15N95K5, STW15N95K5 N-channel 950 V, 0.41 typ., 12 A SuperMESH 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STF15N95K5 30 W 3 2 STP15N95K5 950 V 0.5 12 A 1 170 W TO-220FP STW15N95K5 TAB TO-220 worldwide best RDS(on) Worldwide best FOM (figure of merit) Ultra
9.10. Size:914K st
stf15nm65n stfi15nm65n.pdf
STF15NM65N,STFI15NM65N N-channel 650 V, 0.35 typ., 12 A MDmesh II Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features Order code VDSS @Tjmax RDS(on) max. ID STF15NM65N 3 2 710 V 0.38 12 A 1 STFI15NM65N 1 TO-220FP 2 3 100% avalanche tested I 2PAKFP Low input capacitance and gate charge (TO-281) Low gate input resistance
9.11. Size:598K st
stp15nm60nd stf15nm60nd sti15nm60nd stb15nm60nd stw15nm60nd.pdf
STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS (@Tjmax)RDS(on) max ID 3 3 STB15NM60ND 14 A 2 1 1 STF15NM60ND 14 A D2PAK I PAK STI15NM60ND 650 V 0.299 14 A(1) 3 2 1 STP15NM60ND 14 A STW15NM60ND 14 A TO-247 1. Limited only by maximum temperature
9.13. Size:919K st
stf15n65m5 stfi15n65m5 stp15n65m5.pdf
STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max 3 2 1 STF15N65M5 TO-220FP STFI15N65M5 710 V
9.14. Size:199K inchange semiconductor
stf15nm65n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF15NM65N FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage
Otros transistores... STF130N10F3
, STF13N60M2
, STF13N65M2
, STF13N80K5
, STF13NM50N
, STF13NM60ND
, STF140N8F7
, STF14NM65N
, IRF530
, STF15N65M5
, STF15N80K5
, STF15N95K5
, STF15NM60N
, STF16N50M2
, STF16N60M2
, STF16N65M2
, STF16NM50N
.
History: STF13N60M2
