STF7N80K5 Todos los transistores

 

STF7N80K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STF7N80K5
   Código: 7N80K5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 13.4 nC
   trⓘ - Tiempo de subida: 8.3 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220FP

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STF7N80K5 Datasheet (PDF)

 ..1. Size:677K  st
stf7n80k5 stfi7n80k5.pdf

STF7N80K5
STF7N80K5

STF7N80K5, STFI7N80K5N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeatures Order codes VDS RDS(on)max ID PTOTSTF7N80K5800 V 1.2 6 A 25 WSTFI7N80K5 Worldwide best FOM (figure of merit)32 Ultra low gate charge1123TO-220FP 100% avalanche testedI 2PAKFP

 9.1. Size:596K  st
std7nm60n stf7nm60n stu7nm60n.pdf

STF7N80K5
STF7N80K5

STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9 5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications

 9.2. Size:924K  st
std7n52dk3 stf7n52dk3 stp7n52dk3.pdf

STF7N80K5
STF7N80K5

STD7N52DK3STF7N52DK3, STP7N52DK3N-channel 525 V, 0.95 , 6 A, DPAK, TO-220FP, TO-220SuperFREDmesh3 Power MOSFETFeaturesRDS(on) Order codes VDSS max. ID Pw31STD7N52DK3 6 A 90 WDPAKSTF7N52DK3 525 V

 9.3. Size:1194K  st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf

STF7N80K5
STF7N80K5

STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax 3311STB7N52K3 525 V

 9.4. Size:1317K  st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf

STF7N80K5
STF7N80K5

STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.72 , 6 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax. 3311STB7N52K3 90 WDPAKDPAKSTD7N52K3 90 W525 V

 9.5. Size:882K  st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf

STF7N80K5
STF7N80K5

STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V

 9.6. Size:859K  st
stf7n60m2.pdf

STF7N80K5
STF7N80K5

STF7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF7N60M2 650 V 0.95 5 A Extremely low gate charge32 Lower RDS(on) x area vs previous generation1 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protectedApp

 9.7. Size:939K  st
stf7n95k3 stp7n95k3 stw7n95k3.pdf

STF7N80K5
STF7N80K5

STF7N95K3STP7N95K3, STW7N95K3N-channel 950 V, 1.1 , 7.2 A, TO-220, TO-220FP, TO-247Zener-protected SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax3STF7N95K3 950 V

 9.8. Size:725K  st
std7nk30z stf7nk30z stp7nk30z.pdf

STF7N80K5
STF7N80K5

STD7NK30Z, STF7NK30ZSTP7NK30ZN-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF7NK30Z 300 V

 9.9. Size:899K  st
stf7n65m2.pdf

STF7N80K5
STF7N80K5

STF7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesRDS(on) Order code VDS max IDSTF7N65M2 650 V 1.15 5 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsFigure 1

 9.10. Size:969K  st
std7nm80 std7nm80-1 stf7nm80 stp7nm80.pdf

STF7N80K5
STF7N80K5

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

 9.11. Size:270K  st
stf7n90k5.pdf

STF7N80K5
STF7N80K5

STF7N90K5DatasheetN-channel 900 V, 0.72 typ., 7 A, MDmesh K5 Power MOSFET in a TO-220FP packageFeaturesOrder code VDS RDS(on ) max. IDSTF7N90K5 900 V 0.81 7 A Industrys lowest RDS(on) x area3 Industrys best FoM (figure of merit)21 Ultra-low gate charge 100% avalanche testedTO-220FP Zener-protectedD(2)Applications Switching appl

 9.12. Size:424K  st
std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf

STF7N80K5
STF7N80K5

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

 9.13. Size:426K  st
std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf

STF7N80K5
STF7N80K5

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

 9.14. Size:971K  st
std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf

STF7N80K5
STF7N80K5

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

 9.15. Size:890K  st
stf7n105k5.pdf

STF7N80K5
STF7N80K5

STF7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeatures Order code VDS RDS(on) max. ID PTOTSTF7N105K5 1050 V 2 4 A 25 W Worldwide best FOM (figure of merit) Ultra low gate charge32 100% avalanche tested1 Zener-protectedTO-220FPApplications Switching applic

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