IRHLG77110 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHLG77110

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 119 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm

Encapsulados: MO-036AB

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IRHLG77110 datasheet

 ..1. Size:206K  international rectifier
 irhlg77110.pdf pdf_icon

IRHLG77110

PRELIMINARY PD-97178 2N7612M1 RADIATION HARDENED IRHLG77110 LOGIC LEVEL POWER MOSFET 100V, Quad N-CHANNEL TECHNOLOGY THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHLG77110 100K Rads (Si) 0.22 1.8A IRHLG73110 300K Rads (Si) 0.22 1.8A MO-036AB International Rectifier s R7TM Logic Level Power Features MOSFETs provide simple solution to

 7.1. Size:202K  international rectifier
 irhlg77214.pdf pdf_icon

IRHLG77110

PD-97339 2N7614M1 RADIATION HARDENED IRHLG77214 LOGIC LEVEL POWER MOSFET 250V, Quad N-CHANNEL TECHNOLOGY THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHLG77214 100K Rads (Si) 1.1 0.8A IRHLG73214 300K Rads (Si) 1.1 0.8A MO-036AB International Rectifier s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL

 7.2. Size:207K  international rectifier
 irhlg770z4.pdf pdf_icon

IRHLG77110

PRELIMINARY PD-95865B 2N7618M1 RADIATION HARDENED IRHLG770Z4 LOGIC LEVEL POWER MOSFET 60V, Quad N-CHANNEL TECHNOLOGY THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6 1.07A IRHLG730Z4 300K Rads (Si) 0.6 1.07A MO-036AB International Rectifier s R7TM Logic Level Power Features MOSFETs provide simple solution to

 8.1. Size:213K  international rectifier
 irhlg7970z4.pdf pdf_icon

IRHLG77110

PRELIMINARY PD-97200B 2N7628M1 RADIATION HARDENED IRHLG7970Z4 LOGIC LEVEL POWER MOSFET 60V, Quad P-CHANNEL THRU-HOLE (MO-036AB) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLG7970Z4 100K Rads (Si) 1.25 -0.71A IRHLG7930Z4 300K Rads (Si) 1.25 -0.71A MO-036AB International Rectifier s R7TM Logic Level Power Features MOSFETs provide simple solut

MOSTRAR MÁS

Otros transistores... IRHG9110, IRHI7360SE, IRHI7460SE, IRHLF770Z4, IRHLF7970Z4, IRHLF87Y20, IRHLG7670Z4, IRHLG770Z4, AO3400, IRHLG77214, IRHLG7970Z4, IRHLNA77064, IRHLNA797064, IRHLNJ77034, IRHLNJ797034, IRHLNM77110, IRHLNM87Y20