IRHLG7970Z4 Todos los transistores

 

IRHLG7970Z4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHLG7970Z4

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 0.71 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 2.8 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 39 pF

Resistencia drenaje-fuente RDS(on): 1.25 Ohm

Empaquetado / Estuche: MO-036AB

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IRHLG7970Z4 Datasheet (PDF)

1.1. irhlg7970z4.pdf Size:213K _update

IRHLG7970Z4
IRHLG7970Z4

PRELIMINARY PD-97200B 2N7628M1 RADIATION HARDENED IRHLG7970Z4 LOGIC LEVEL POWER MOSFET 60V, Quad P-CHANNEL THRU-HOLE (MO-036AB) TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLG7970Z4 100K Rads (Si) 1.25Ω -0.71A IRHLG7930Z4 300K Rads (Si) 1.25Ω -0.71A MO-036AB International Rectifier’s R7TM Logic Level Power Features: MOSFETs provide simple solut

4.1. irhlg770z4.pdf Size:207K _update

IRHLG7970Z4
IRHLG7970Z4

PRELIMINARY PD-95865B 2N7618M1 RADIATION HARDENED IRHLG770Z4 LOGIC LEVEL POWER MOSFET 60V, Quad N-CHANNEL TECHNOLOGY THRU-HOLE (MO-036AB) ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6Ω 1.07A IRHLG730Z4 300K Rads (Si) 0.6Ω 1.07A MO-036AB International Rectifier’s R7TM Logic Level Power Features: MOSFETs provide simple solution to

4.2. irhlg77214.pdf Size:202K _update

IRHLG7970Z4
IRHLG7970Z4

PD-97339 2N7614M1 RADIATION HARDENED IRHLG77214 LOGIC LEVEL POWER MOSFET 250V, Quad N-CHANNEL TECHNOLOGY THRU-HOLE (MO-036AB) ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLG77214 100K Rads (Si) 1.1Ω 0.8A IRHLG73214 300K Rads (Si) 1.1Ω 0.8A MO-036AB International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL

 4.3. irhlg77110.pdf Size:206K _update

IRHLG7970Z4
IRHLG7970Z4

PRELIMINARY PD-97178 2N7612M1 RADIATION HARDENED IRHLG77110 LOGIC LEVEL POWER MOSFET 100V, Quad N-CHANNEL TECHNOLOGY THRU-HOLE (MO-036AB) ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLG77110 100K Rads (Si) 0.22Ω 1.8A IRHLG73110 300K Rads (Si) 0.22Ω 1.8A MO-036AB International Rectifier’s R7TM Logic Level Power Features: MOSFETs provide simple solution to

4.4. irhlg7670z4.pdf Size:300K _update

IRHLG7970Z4
IRHLG7970Z4

PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID CHANNEL 0.6Ω 1.07A N IRHLG7670Z4 100K Rads (Si) 1.25Ω -0.71A P 0.6Ω 1.07A N IRHLG7630Z4 300K Rads (Si) 1.25Ω -0.71A P MO-036AB International Rectifier

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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