IRHLNJ797034 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHLNJ797034
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 36 nC
   trⓘ - Tiempo de subida: 250 nS
   Cossⓘ - Capacitancia de salida: 583 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: SMD-0.5

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IRHLNJ797034 Datasheet (PDF)

..1. Size:203K international rectifier
irhlnj797034.pdf

PD-97302B2N7624U3RADIATION HARDENED IRHLNJ797034LOGIC LEVEL POWER MOSFET60V, P-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLNJ797034 100K Rads (Si) 0.072 22A* IRHLNJ793034 300K Rads (Si) 0.072 22A*SMD-0.5Features:International Rectifiers R7TM Logic Level PowerMOSFETs provide simple solution to interfa

7.1. Size:199K international rectifier
irhlnj77034.pdf

PD-97301C2N7606U3RADIATION HARDENED IRHLNJ77034LOGIC LEVEL POWER MOSFET60V, N-CHANNELSURFACE MOUNT (SMD-0.5)TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLNJ77034 100K Rads (Si) 0.035 22A* IRHLNJ73034 300K Rads (Si) 0.035 22A*SMD-0.5International Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMOS and

9.1. Size:200K international rectifier
irhlnm87y20.pdf

PD-97811RADIATION HARDENED IRHLNM87Y20LOGIC LEVEL POWER MOSFET20V, N-CHANNELSURFACE MOUNT (SMD-0.2)R8 TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLNM87Y20 100K Rads (Si) 15m 17A* IRHLNM83Y20 300K Rads (Si) 15m 17A* SMD-0.2 (METAL LID)International Rectifiers R8TM Logic Level Power MOSFETsprovide simple solution to interfacing CMOS

9.2. Size:173K international rectifier
irhlnm77110.pdf

PD-97326B2N7609U8RADIATION HARDENED IRHLNM77110LOGIC LEVEL POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-0.2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLNM77110 100K Rads (Si) 0.29 6.5A IRHLNM73110 300K Rads (Si) 0.29 6.5ASMD-0.2International Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMOS and T

9.3. Size:193K international rectifier
irhlna77064.pdf

PRELIMINARYPD-97177B2N7604U2RADIATION HARDENED IRHLNA77064LOGIC LEVEL POWER MOSFET60V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLNA77064 100K Rads (Si) 0.012 56A* IRHLNA73064 300K Rads (Si) 0.012 56A*SMD-2Features:International Rectifiers R7TM Logic Level PowerMOSFETs provide simple solution to i

9.4. Size:201K international rectifier
irhlna797064.pdf

PRELIMINARYPD-97174A 2N7622U2RADIATION HARDENED IRHLNA797064LOGIC LEVEL POWER MOSFET60V, P-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLNA797064 100K Rads (Si) 0.015 -56A* IRHLNA793064 300K Rads (Si) 0.015 -56A*SMD-2International Rectifiers R7TM Logic Level PowerFeatures:MOSFETs provide simple solutio

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