IRHLUBC7970Z4 Todos los transistores

 

IRHLUBC7970Z4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHLUBC7970Z4
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.53 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 3.6 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 43 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: UB

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IRHLUBC7970Z4 Datasheet (PDF)

 ..1. Size:225K  international rectifier
irhlubc7970z4.pdf

IRHLUBC7970Z4
IRHLUBC7970Z4

PD-94764LIRHLUB7970Z4RADIATION HARDENED JANSR2N7626UBLOGIC LEVEL POWER MOSFET 60V, P-CHANNELSURFACE MOUNT (UB) REF: MIL-PRF-19500/745TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UB IRHLUB7930Z4 300K Rads (Si) 1.4 -0.53A JANSF2N7626UB UBRefer to Page 11 for 3 Additional Part Num

 9.1. Size:298K  international rectifier
irhluc7670z4.pdf

IRHLUBC7970Z4
IRHLUBC7970Z4

PD-97268A2N7632UCIRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-6)Product SummaryPart Number Radiation Level RDS(on) ID CHANNEL 0.75 0.89A N IRHLUC7670Z4 100K Rads (Si)1.60 -0.65A P 0.75 0.89A N IRHLUC7630Z4 300K Rads (Si)1.60 -0.65A PLCC-6International Rectifiers R7TM Log

 9.2. Size:204K  international rectifier
irhluc7970z4.pdf

IRHLUBC7970Z4
IRHLUBC7970Z4

PD-975742N7627UCIRHLUC7970Z4 RADIATION HARDENED60V, DUAL P-CHANNEL LOGIC LEVEL POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-6)Product Summary Part Number Radiation Level RDS(on) ID IRHLUC7970Z4 100K Rads (Si) 1.60 -0.65A IRHLUC7930Z4 300K Rads (Si) 1.60 -0.65ALCC-6International Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing

 9.3. Size:201K  international rectifier
irhluc770z4.pdf

IRHLUBC7970Z4
IRHLUBC7970Z4

PD-975732N7617UC IRHLUC770Z4 RADIATION HARDENED60V, DUAL-N CHANNEL LOGIC LEVEL POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-6)Product Summary Part Number Radiation Level RDS(on) ID IRHLUC770Z4 100K Rads (Si) 0.75 0.89A IRHLUC730Z4 300K Rads (Si) 0.75 0.89ALCC-6International Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMO

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