IRHLUC7970Z4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHLUC7970Z4
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 46 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Paquete / Cubierta: LCC-6
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IRHLUC7970Z4 Datasheet (PDF)
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PD-94764LIRHLUB7970Z4RADIATION HARDENED JANSR2N7626UBLOGIC LEVEL POWER MOSFET 60V, P-CHANNELSURFACE MOUNT (UB) REF: MIL-PRF-19500/745TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UB IRHLUB7930Z4 300K Rads (Si) 1.4 -0.53A JANSF2N7626UB UBRefer to Page 11 for 3 Additional Part Num
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918