IRF1010NPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1010NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO-220AB

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IRF1010NPBF datasheet

 ..1. Size:225K  international rectifier
 irf1010npbf.pdf pdf_icon

IRF1010NPBF

PD - 94966A IRF1010NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 11m l Fast Switching G l Fully Avalanche Rated ID = 85A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 6.1. Size:146K  international rectifier
 irf1010ns.pdf pdf_icon

IRF1010NPBF

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 11m Fully Avalanche Rated G Description Advanced HEXFET Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low

 6.2. Size:292K  international rectifier
 irf1010nspbf irf1010nlpbf.pdf pdf_icon

IRF1010NPBF

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11m l Lead-Free G Description ID = 85A Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t

 6.3. Size:211K  international rectifier
 irf1010n.pdf pdf_icon

IRF1010NPBF

PD - 91278 IRF1010N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 11m G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

MOSTRAR MÁS

Otros transistores... IRF1010ELPBF, IRF1010EPBF, IRF1010ESPBF, IRF1010EZLPBF, IRF1010EZPBF, IRF1010EZSPBF, IRF1010H, IRF1010NLPBF, AO3407, IRF1010NSPBF, IRF1010ZLPBF, IRF1010ZPBF, IRF1010ZSPBF, IRF1018EPBF, IRF1018ESLPBF, IRF1018ESPBF, IRF1104PBF