IRF1018ESPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF1018ESPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 79 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
   Paquete / Cubierta: TO-263

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IRF1018ESPBF Datasheet (PDF)

..1. Size:429K international rectifier
irf1018epbf irf1018eslpbf irf1018espbf.pdf

PD - 97125IRF1018EPbFIRF1018ESPbFIRF1018ESLPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inDSMPSVDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 8.4m:ID 79ASBenefitsl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDDl

..2. Size:429K infineon
irf1018epbf irf1018espbf irf1018eslpbf.pdf

5.1. Size:658K infineon
auirf1018es.pdf

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

5.2. Size:258K inchange semiconductor
irf1018es.pdf

Isc N-Channel MOSFET Transistor IRF1018ESFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

6.1. Size:156K infineon
auirf1018e.pdf

International Rectifier Product Detail Page Page 1 of 2Part Se AUIRF1018EPart: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB PackageDescription:Support Docs: N/A Commercial Datasheet Reliability ReportAutomotive MarketIR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact

6.2. Size:246K inchange semiconductor
irf1018e.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1018EIIRF1018EFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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