IRF131 Datasheet. Equivalente

 ..1. Size:47K  harris semi
 irf131 irf132 irf133.pdf

IRF130, IRF131, S E M I C O N D U C T O R IRF132, IRF133 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, October 1997 N-Channel Power MOSFETs Features Description 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.16 and 0.23 MOSFETs designed, tested, and guaranteed to withstand a

 0.1. Size:594K  international rectifier
 irf1310npbf.pdf

PD - 95690 IRF1310NPbF Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.5

 0.2. Size:721K  international rectifier
 irf1310nspbf.pdf

PD- 95322 IRF1310NS/LPbF Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 www.irf.com IRF1310NS/LPbF www.irf.com 5 IRF1310NS/LPbF 6 www.irf.com IRF1310NS/LPbF www.irf.com 7 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL

 0.3. Size:721K  international rectifier
 irf1310nspbf irf1310nlpbf.pdf

PD- 95322 IRF1310NS/LPbF Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 www.irf.com IRF1310NS/LPbF www.irf.com 5 IRF1310NS/LPbF 6 www.irf.com IRF1310NS/LPbF www.irf.com 7 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL

 0.4. Size:182K  international rectifier
 irf1310s.pdf

PD - 9.1221 IRF1310S HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount VDSS = 100V Available in Tape & Reel Dynamic dv/dt Rating RDS(on) = 0.04 Repetitive Avalanche Rated 175 C Operating Temperature ID = 41A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi

 0.5. Size:226K  international rectifier
 irf1312.pdf

PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 10m 95A l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See TO-220AB D2Pak TO-262 App. Note AN1001) I

 0.6. Size:156K  international rectifier
 irf1310ns.pdf

PD - 91514B IRF1310NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175 C Operating Temperature RDS(on) = 0.036 G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 0.7. Size:96K  international rectifier
 irf1310n.pdf

PD - 91504A IRF1310N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.036 Fully Avalanche Rated G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene

 0.8. Size:278K  international rectifier
 irf1312pbf.pdf

PD- 95409A IRF1312PbF IRF1312SPbF IRF1312LPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l Motor Control 80V 10m 95A l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See TO-220AB D2Pak TO-26

 0.9. Size:256K  inchange semiconductor
 irf1310nl.pdf

Isc N-Channel MOSFET Transistor IRF1310NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10

 0.10. Size:258K  inchange semiconductor
 irf1310ns.pdf

Isc N-Channel MOSFET Transistor IRF1310NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 0.11. Size:245K  inchange semiconductor
 irf1310n.pdf

isc N-Channel MOSFET Transistor IRF1310N IIRF1310N FEATURES Static drain-source on-resistance RDS(on) 0.036 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a