IRF1310NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF1310NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: TO-220AB

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IRF1310NPBF Datasheet (PDF)

..1. Size:594K international rectifier
irf1310npbf.pdf

PD - 95690IRF1310NPbF Lead-Freewww.irf.com8/19/04IRF1310NPbF2 www.irf.comIRF1310NPbFwww.irf.com 3IRF1310NPbF4 www.irf.comIRF1310NPbFwww.irf.com 5IRF1310NPbF6 www.irf.comIRF1310NPbFwww.irf.com 7IRF1310NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.5

..2. Size:594K infineon
irf1310npbf.pdf

6.1. Size:721K international rectifier
irf1310nspbf.pdf

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

6.2. Size:156K international rectifier
irf1310ns.pdf

PD - 91514BIRF1310NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating TemperatureRDS(on) = 0.036G Fast Switching Fully Avalanche RatedID = 42ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

6.3. Size:96K international rectifier
irf1310n.pdf

PD - 91504AIRF1310NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036 Fully Avalanche RatedGDescription ID = 42ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbene

6.4. Size:721K infineon
irf1310nspbf irf1310nlpbf.pdf

6.5. Size:256K inchange semiconductor
irf1310nl.pdf

Isc N-Channel MOSFET Transistor IRF1310NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

6.6. Size:258K inchange semiconductor
irf1310ns.pdf

Isc N-Channel MOSFET Transistor IRF1310NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

6.7. Size:245K inchange semiconductor
irf1310n.pdf

isc N-Channel MOSFET Transistor IRF1310NIIRF1310NFEATURESStatic drain-source on-resistance:RDS(on) 0.036Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

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