IRF1404LPBF Datasheet. Equivalente

 ..1. Size:274K  international rectifier
 irf1404lpbf irf1404spbf.pdf

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

 6.1. Size:306K  international rectifier
 irf1404l.pdf

PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

 6.2. Size:303K  infineon
 auirf1404s auirf1404l.pdf

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175 C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

 7.1. Size:274K  international rectifier
 irf1404spbf.pdf

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

 7.2. Size:107K  international rectifier
 irf1404.pdf

PD -91896E IRF1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 7.3. Size:139K  international rectifier
 irf1404s.pdf

PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

 7.4. Size:286K  international rectifier
 irf1404zgpbf.pdf

PD - 96236A IRF1404ZGPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 3.7m l Halogen-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low

 7.5. Size:362K  international rectifier
 auirf1404zstrl.pdf

PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET Power MOSFET Low On-Resistance D V(BR)DSS 40V 175 C Operating Temperature Fast Switching RDS(on) max. 3.7m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A

 7.6. Size:181K  international rectifier
 irf1404z.pdf

PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 3.7m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

 7.7. Size:298K  international rectifier
 irf1404zlpbf irf1404zpbf irf1404zspbf.pdf

PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m l Repetitive Avalanche Allowed up to Tjmax max. 3.7m l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET P

 7.8. Size:212K  international rectifier
 auirf1404.pdf

PD-97684 AUTOMOTIVE GRADE AUIRF1404 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l Dynamic dv/dt Rating RDS(on) typ. 3.5m l 175 C Operating Temperature max 4.0m l Fast Switching G ID (Silicon Limited) 202A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 160A up to Tjmax l Lead-Free

 7.9. Size:208K  international rectifier
 irf1404pbf.pdf

PD-94968B IRF1404PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.004 l Fully Avalanche Rated G l Lead-Free ID = 202A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 7.10. Size:302K  international rectifier
 irf1404zpbf irf1404zspbf irf1404zlpbf.pdf

PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m l Repetitive Avalanche Allowed up to Tjmax max. 3.7m l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET P

 7.11. Size:383K  infineon
 auirf1404z auirf1404zs auirf1404zl.pdf

AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto

 7.12. Size:2504K  kexin
 irf1404z.pdf

DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching 1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54T

 7.13. Size:245K  inchange semiconductor
 irf1404.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404 IIRF1404 FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

 7.14. Size:252K  inchange semiconductor
 irf1404s.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

 7.15. Size:258K  inchange semiconductor
 irf1404zs.pdf

Isc N-Channel MOSFET Transistor IRF1404ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 7.16. Size:245K  inchange semiconductor
 irf1404z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404Z IIRF1404Z FEATURES Static drain-source on-resistance RDS(on) 3.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM