IXFT12N100 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFT12N100 datasheet

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ixft10n100 ixft12n100.pdf pdf_icon

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ixft12n100qhv.pdf pdf_icon

Advance Technical Information High Voltage HiPerFETTM VDSS = 1000V IXFT12N100QHV Power MOSFET ID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1000 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V G = Ga

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ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETs IXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS

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ixfh12n90q ixft12n90q.pdf pdf_icon

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC

Otros transistores... IXFR26N50Q , IXFR30N50Q , IXFR32N50Q , IXFR50N50 , IXFR55N50 , IXFR58N20Q , IXFR80N20Q , IXFT10N100 , STP75NF75 , IXFT12N100Q , IXFT13N80Q , IXFT14N100 , IXFT15N100 , IXFT15N80Q , IXFT20N60Q , IXFT20N80Q , IXFT24N100 .