STI150N10F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STI150N10F7
Código: 150N10F7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 250 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 110 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 117 nC
Tiempo de subida (tr): 57 nS
Conductancia de drenaje-sustrato (Cd): 1510 pF
Resistencia entre drenaje y fuente RDS(on): 0.0042 Ohm
Paquete / Cubierta: I2PAK
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STI150N10F7 Datasheet (PDF)
sti150n10f7 stp150n10f7.pdf
STI150N10F7, STP150N10F7N-channel 100 V, 0.0036 typ., 110 A, STripFET F7 Power MOSFETs in I2PAK and TO-220 packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max ID PTOTSTI150N10F7100 V 0.0042 110 A 250 WSTP150N10F7TABTAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity33
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stb15nm60n stf15nm60n sti15nm60n stp15nm60n stw15nm60n.pdf
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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