STL10N60M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STL10N60M2N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL10N60M2 650 V 0.660 5.5 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% aval

STL10N65M2DatasheetN-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageFeaturesVDS RDS(on ) max. IDOrder codeSTL10N65M2 650 V 1.00 4.5 A12 Extremely low gate charge34 Excellent output capacitance (COSS) profilePowerFLAT 5x6 HV 100% avalanche tested Zener-protectedD(5, 6, 7, 8)8 7 6 5Applications Switch

STL10N3LLH5N-channel 30 V, 0.015 , 9 A, PowerFLAT 3.3x3.3STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL10N3LLH5 30 V

STL105NS3LLH7N-channel 30 V, 0.0033 typ., 27 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6Datasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL105NS3LLH7 30 V 0.0039 27 A Very low on-resistance12 Very low Qg34 Avalanche high ruggednessPowerFLAT5x6 Embedded Schottky diodeApplications Switching

STL106DHigh voltage fast-switching NPN power transistorFeatures NPN transistor Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps at 110V A.C. mains Flyback and forward single transistor low power TO-92converters at 110V A.C. mainsDescriptionFigure 1. Intern

STL100N1VH5N-channel 12 V, 0.0022 , 25 A PowerFLAT (5x6)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL100N1VH5 12 V

STL100N10F7N-channel 100 V, 0.0062 typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDSS max ID PTOT1STL100N10F7 100 V 0.0073 19 A 5 W234 Ultra low on-resistancePowerFLAT 5x6 100% avalanche testedApplications Switching applicationsDescriptionFigure 1. Int

STL100N6LF6N-channel 60 V, 3.3 m typ., 25 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL100N6LF6 60 V 4.4 m 25 A Low gate charge12 Very low on-resistance34 High avalanche ruggednessPowerFLAT 5x6Applications Switching applicationsDescriptionFigure 1.

STL100NH3LLN-channel 30 V - 0.0032 - 25 A - PowerFLAT (6x5)STripFET III Power MOSFETFeaturesRDS(on)Type VDSS IDmaxSTL100NH3LL 30 V