IXFT15N100 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFT15N100 datasheet

..1. Size:116K ixys
ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 1000 V (TAB) VGS Continuous

7.1. Size:111K ixys
ixfh15n80q ixft15n80q.pdf pdf_icon

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C15 A IDM

8.1. Size:182K ixys
ixfh150n17t2 ixft150n17t2.pdf pdf_icon

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 175V IXFH150N17T2 ID25 = 150A Power MOSFET IXFT150N17T2 RDS(on) 12.0m trr 160ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 175 V G VDGR TJ = 25 C to 175 C, RG

8.2. Size:180K ixys
ixfh150n20t ixft150n20t.pdf pdf_icon

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T RDS(on) 15m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V TO-247 (IX

Otros transistores... IXFR55N50 , IXFR58N20Q , IXFR80N20Q , IXFT10N100 , IXFT12N100 , IXFT12N100Q , IXFT13N80Q , IXFT14N100 , IRLB4132 , IXFT15N80Q , IXFT20N60Q , IXFT20N80Q , IXFT24N100 , IXFT26N50Q , IXFT26N60Q , IXFT30N50 , IXFT32N50 .