IXFT4N100Q Todos los transistores

 

IXFT4N100Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT4N100Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 39 nC

Resistencia drenaje-fuente RDS(on): 2.8 Ohm

Empaquetado / Estuche: TO268

Búsqueda de reemplazo de MOSFET IXFT4N100Q

 

IXFT4N100Q Datasheet (PDF)

1.1. ixfh4n100q ixft4n100q.pdf Size:87K _ixys

IXFT4N100Q
IXFT4N100Q

IXFH 4N100Q VDSS = 1000 V HiPerFETTM IXFT 4N100Q ID25 = 4 A Power MOSFETs RDS(on) = 3.0 W Q-Class trr ? 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 MW 1000 V VGS Continuous 20 V G (TAB) D VGSM Transient 30 V S

5.1. ixfh44n50p ixfk44n50p ixft44n50p.pdf Size:296K _ixys

IXFT4N100Q
IXFT4N100Q

IXFH 44N50P VDSS = 500 V PolarHVTM HiPerFET IXFK 44N50P ID25 = 44 A Power MOSFET IXFT 44N50P RDS(on) ? 140 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 500 V VGSM Transient 40 V (TAB) VGSM Co

5.2. ixfh42n50p2 ixft42n50p2.pdf Size:127K _ixys

IXFT4N100Q
IXFT4N100Q

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH42N50P2 ID25 = 42A Power MOSFET IXFT42N50P2 ? ? RDS(on) ? ? ? 145m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G D Symbol Test Conditions Maximum Ratings D (Tab) S VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M? 500 V TO-268 (IXFT) VGSS Continuous 3

 5.3. ixfh40n50q ixft40n50q.pdf Size:123K _ixys

IXFT4N100Q
IXFT4N100Q

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs ? RDS(on) = 0.14 ? ? ? ? Q-Class ? ? trr ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V (TA

5.4. ixfh46n30t ixft46n30t.pdf Size:172K _ixys

IXFT4N100Q
IXFT4N100Q

Advance Technical Information TrenchTM HiperFETTM VDSS = 300V IXFH46N30T Power MOSFET ID25 = 46A IXFT46N30T   RDS(on)    80m     N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 300 V D D (Tab) S VDGR TJ = 25C to 150C, RGS = 1M 300 V VG

 5.5. ixft40n50q.pdf Size:122K _ixys

IXFT4N100Q
IXFT4N100Q

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs Ω RDS(on) = 0.14 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500

5.6. ixft44n50q3.pdf Size:509K _ixys

IXFT4N100Q
IXFT4N100Q

Reduce The Size of Your High Power Design 1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package Technology Q3-Class HiPerFETTM Features: •Low Rdson & Qg •Low Intrinsic Gate Resistance •Fast Intrinsic Rectifier •Excellent dV/dt Performance •High Avalanche Energy Capabilities SMPD Package Features: •High Speed Switching Capabilities •Compact, Ultra-low Package Pr

5.7. ixfh40n30q ixft40n30q.pdf Size:50K _ixys

IXFT4N100Q
IXFT4N100Q

IXFH 40N30Q HiPerFETTM VDSS = 300 V IXFT 40N30Q Power MOSFETs ID25 = 40 A Q-Class RDS(on) = 80 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet TO-268 (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V G (TAB) VGSM Transie

5.8. ixfh400n075t2-ixft400n075t2.pdf Size:188K _ixys

IXFT4N100Q
IXFT4N100Q

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 75V IXFH400N075T2 ID25 = 400A Power MOSFET IXFT400N075T2 ? ? RDS(on) ? ? ? 2.3m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C, RGS = 1M? 75 V VGSS Continuous 20 V VGSM Tr

Otros transistores... IXFT20N80Q , IXFT24N100 , IXFT26N50Q , IXFT26N60Q , IXFT30N50 , IXFT32N50 , IXFT32N50Q , IXFT40N30Q , BF245A , IXFT52N30Q , IXFT58N20Q , IXFT60N25Q , IXFT6N100Q , IXFT7N90 , IXFT80N10Q , IXFT80N20Q , IXFX100N25 .

 
Back to Top

 


IXFT4N100Q
  IXFT4N100Q
  IXFT4N100Q
  IXFT4N100Q
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top