STW200NF03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STW200NF03N-CHANNEL 30V - 0.002 - 120A TO-247ULTRA LOW ON-RESISTANCE STripFET II MOSFETTYPE VDSS RDS(on) IDSTW200NF03 30V

2STW1002STW200Complementary power Darlington transistorsPreliminary dataFeatures Complementary NPN - PNP transistors Monolithic Darlington configurationApplications Audio power amplifier DC-AC converter 321 Low voltage DC motor drive General purpose switching applicationsTO-247DescriptionFigure 1. Internal schematic diagramsThe devices are man

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2STW200DESCRIPTIONWith TO-3PN packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type 2STW100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectro

STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32

STW20NM50N-CHANNEL 550V @ Tjmax - 0.20 - 20ATO-247MDmesh MOSFETTYPE VDSS RDS(on) ID(@Tjmax)STW20NM50 550V

STW20N90K5DatasheetN-channel 900 V, 0.21 typ., 20 A MDmesh K5 Power MOSFET in a TO247 packageFeaturesVDS RDS(on ) max. IDOrder codeSTW20N90K5 900 V 0.25 20 A Industrys lowest RDS(on) x area32 Industrys best FoM (figure of merit)1 Ultra-low gate chargeTO-247 100% avalanche tested Zener-protectedD(2, TAB)Applications Switch

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V

STB20NK50Z, STF20NK50ZSTP20NK50Z, STW20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected TO-220, TO-247, TO-220FP, D2PAKFeatures RDS(on) Type VDSS ID PWmax3322STB20NK50Z 500 V

STW20NB50N - CHANNEL 500V - 0.22 - 20A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW20NB50 500 V

STW20NC50N-CHANNEL 500V - 0.22 - 18.4A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW20NC50 500V

STF20NM60D - STP20NM60FDSTW20NM60FDN-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID PwSTF20NM60D 600V

STW20NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW20NA50 500 V

STW20NM65N-STI20NM65N-STF20NM65NSTB20NM65N-STP20NM65NN-channel 650V - 0.16 - 19A - TO-220/FP - D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) Max ID(@TJmax)323121STB20NM65N 710V

STW20NM60N-CHANNEL 600V - 0.26 - 20A TO-247MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTW20NM60 600V

STW2040High voltage fast-switching NPN power transistor .Features High voltage capability High DC current gain Minimum lot to lot spread for reliable operationApplication321 Switching mode power suppliesTO-247DescriptionFigure 1. Internal schematic diagramThe STW2040 is manufactured using diffused collector in planar technology adopting base island

STP20NK50Z - STW20NK50ZN-CHANNEL 500V - 0.23 - 20A TO-220/TO-247Zener-Protected SuperMESHPower MOSFETTARGET DATATYPE VDSS RDS(on) ID PwSTP20NK50Z 500 V

STW20NK70ZN-CHANNEL 700V - 0.25 - 20ATO-247Zener-Protected SuperMESH MOSFETTYPE VDSS RDS(on) ID PwSTW20NK70Z 700 V

STW20N95DK5, STWA20N95DK5 N-channel 950 V, 0.275 typ., 18 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order code V R max. I DS DS(on) DSTW20N95DK5 950 V 0.330 18 A STWA20N95DK5 Fast-recovery body diode Best R x area DS(on) Low gate charge, input capacitance and resistance 100% a

STW20NM50FDN-CHANNEL 500V - 0.22 - 20A TO-247FDmesh Power MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTW20NM50FD 500V

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM60FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM50FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)