STW20N65M5 Datasheet. Equivalente

 ..1. Size:1169K  st
 stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 18 A TAB STP20N65M5 STW20N65M5 Worldwide best RDS(on) * area 3 2

 8.1. Size:1458K  st
 stb20n95k5 stf20n95k5 stp20n95k5 stw20n95k5.pdf

STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFET in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB Order codes VDSS RDS(on)max ID PW 3 STB20N95K5 250 W 1 3 STF20N95K5 40 W 2 D PAK 1 950 V

 8.2. Size:174K  st
 stw20nm50.pdf

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20 - 20ATO-247 MDmesh MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STW20NM50 550V

 8.3. Size:291K  st
 stw20n90k5.pdf

STW20N90K5 Datasheet N-channel 900 V, 0.21 typ., 20 A MDmesh K5 Power MOSFET in a TO 247 package Features VDS RDS(on ) max. ID Order code STW20N90K5 900 V 0.25 20 A Industry s lowest RDS(on) x area 3 2 Industry s best FoM (figure of merit) 1 Ultra-low gate charge TO-247 100% avalanche tested Zener-protected D(2, TAB) Applications Switch

 8.4. Size:444K  st
 stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V

 8.5. Size:607K  st
 stb20nk50z stf20nk50z stw20nk50z stp20nk50z.pdf

 8.6. Size:197K  st
 stw20nb50.pdf

STW20NB50 N - CHANNEL 500V - 0.22 - 20A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW20NB50 500 V

 8.7. Size:249K  st
 stw20nc50.pdf

STW20NC50 N-CHANNEL 500V - 0.22 - 18.4A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID STW20NC50 500V

 8.8. Size:344K  st
 stf20nm60d stp20nm60fd stw20nm60fd.pdf

STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw STF20NM60D 600V

 8.9. Size:350K  st
 stw20na50.pdf

STW20NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW20NA50 500 V

 8.10. Size:543K  st
 stw20nm65n.pdf

STW20NM65N-STI20NM65N-STF20NM65N STB20NM65N-STP20NM65N N-channel 650V - 0.16 - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) Max ID (@TJmax) 3 2 3 1 2 1 STB20NM65N 710V

 8.11. Size:256K  st
 stw20nm60.pdf

STW20NM60 N-CHANNEL 600V - 0.26 - 20A TO-247 MDmesh Power MOSFET TYPE VDSS RDS(on) ID STW20NM60 600V

 8.12. Size:135K  st
 stp20nk50z stw20nk50z.pdf

STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23 - 20A TO-220/TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE VDSS RDS(on) ID Pw STP20NK50Z 500 V

 8.13. Size:215K  st
 stw20nk70z.pdf

STW20NK70Z N-CHANNEL 700V - 0.25 - 20ATO-247 Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STW20NK70Z 700 V

 8.14. Size:784K  st
 stw20n95dk5 stwa20n95dk5.pdf

STW20N95DK5, STWA20N95DK5 N-channel 950 V, 0.275 typ., 18 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order code V R max. I DS DS(on) D STW20N95DK5 950 V 0.330 18 A STWA20N95DK5 Fast-recovery body diode Best R x area DS(on) Low gate charge, input capacitance and resistance 100% a

 8.15. Size:251K  st
 stw20nm50fd.pdf

STW20NM50FD N-CHANNEL 500V - 0.22 - 20A TO-247 FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) ID STW20NM50FD 500V

 8.16. Size:437K  st
 stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V

 8.17. Size:212K  inchange semiconductor
 stw20nm60fd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW20NM60FD FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.18. Size:211K  inchange semiconductor
 stw20nm50fd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW20NM50FD FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 )