STW265N6F6AG Todos los transistores

 

STW265N6F6AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STW265N6F6AG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 165 nS
   Cossⓘ - Capacitancia de salida: 1235 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00285 Ohm
   Paquete / Cubierta: TO-247

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STW265N6F6AG Datasheet (PDF)

 ..1. Size:689K  st
stp265n6f6ag stw265n6f6ag.pdf

STW265N6F6AG
STW265N6F6AG

STP265N6F6AG, STW265N6F6AG Automotive N-channel 60 V, 2.3 m typ., 180 A STripFET F6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max I DS DS(on) DSTP265N6F6AG 60 V 2.85 m 180 A STW265N6F6AG 60 V 2.85 m 180 A 33 Designed for automotive applications 221 Very low on-resistance 1 Very low g

 9.1. Size:800K  st
stp26n60m2 stw26n60m2.pdf

STW265N6F6AG
STW265N6F6AG

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABV @ R DS DS(on)Order code I P D TOTT max. JmaxSTP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 33221 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

 9.2. Size:263K  st
stw26nm60.pdf

STW265N6F6AG
STW265N6F6AG

STW26NM60N-CHANNEL 600V - 0.125 - 30A TO-247MDmesh MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTW26NM60 600 V

 9.3. Size:1134K  st
stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf

STW265N6F6AG
STW265N6F6AG

STB26NM60N, STF26NM60NSTP26NM60N, STW26NM60NN-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) Type VDSS IDmax32312STB26NM60N 600 V

 9.4. Size:781K  st
stw26nm60n.pdf

STW265N6F6AG
STW265N6F6AG

STW26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max I DS DS(on) DSTW26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge 3 Low gate input resistance 21Applications Switching applications TO-247Description Figure 1

 9.5. Size:562K  st
stw26nm50.pdf

STW265N6F6AG
STW265N6F6AG

STW26NM50N-channel 500 V, 0.10 , 30 A TO-247MDmesh Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTW26NM50 500 V

 9.6. Size:1344K  st
stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf

STW265N6F6AG
STW265N6F6AG

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60NDN-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ Tjmax RDS(on) max ID31STB26NM60ND23D PAK21 STF26NM60ND650 V 0.175 21 ATO-220FPSTP26NM60NDTABSTW26NM60ND 100% avalanche tested3 32

 9.7. Size:261K  inchange semiconductor
stw26nm50.pdf

STW265N6F6AG
STW265N6F6AG

isc N-Channel MOSFET Transistor STW26NM50FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gat

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