STW265N6F6AG Todos los transistores

 ..1. Size:689K  st
 stp265n6f6ag stw265n6f6ag.pdf

STP265N6F6AG, STW265N6F6AG Automotive N-channel 60 V, 2.3 m typ., 180 A STripFET F6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max I DS DS(on) D STP265N6F6AG 60 V 2.85 m 180 A STW265N6F6AG 60 V 2.85 m 180 A 3 3 Designed for automotive applications 2 2 1 Very low on-resistance 1 Very low g

 9.1. Size:800K  st
 stp26n60m2 stw26n60m2.pdf

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB V @ R DS DS(on) Order code I P D TOT T max. Jmax STP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 3 3 2 2 1 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

 9.2. Size:263K  st
 stw26nm60.pdf

STW26NM60 N-CHANNEL 600V - 0.125 - 30A TO-247 MDmesh MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID STW26NM60 600 V

 9.3. Size:1134K  st
 stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf

STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) Type VDSS ID max 3 2 3 1 2 STB26NM60N 600 V

 9.4. Size:781K  st
 stw26nm60n.pdf

STW26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max I DS DS(on) D STW26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge 3 Low gate input resistance 2 1 Applications Switching applications TO-247 Description Figure 1

 9.5. Size:562K  st
 stw26nm50.pdf

STW26NM50 N-channel 500 V, 0.10 , 30 A TO-247 MDmesh Power MOSFET Features RDS(on) Type VDSS ID max STW26NM50 500 V

 9.6. Size:1344K  st
 stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS(on) max ID 3 1 STB26NM60ND 2 3 D PAK 2 1 STF26NM60ND 650 V 0.175 21 A TO-220FP STP26NM60ND TAB STW26NM60ND 100% avalanche tested 3 3 2

 9.7. Size:261K  inchange semiconductor
 stw26nm50.pdf

isc N-Channel MOSFET Transistor STW26NM50 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gat