STW28NK60Z Todos los transistores

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 stw28nk60z.pdf

STW28NK60Z N-CHANNEL 600 V - 0.155 - 27A TO-247 Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID PW STW28NK60Z 600 V

 8.1. Size:1114K  st
 stb28n60m2 sti28n60m2 stp28n60m2 stw28n60m2.pdf

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D PAK, I PAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) D STB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile

 8.2. Size:1235K  st
 stb28n65m2 stf28n65m2 stp28n65m2 stw28n65m2.pdf

STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STB28N65M2 3 3 STF28N65M2 1 2 650 V 0.18 20 A 1 STP28N65M2 D2PAK TO-220FP STW28N65M2 TAB Extremely low gate charge Excellent output

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 stb28nm50n stf28nm50n stp28nm50n stw28nm50n.pdf

STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N N-channel 500 V, 0.135 , 21 A D2PAK, TO-220, TO-220FP, TO-247 MDmesh II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB28NM50N TO-220 TO-220FP STF28NM50N 550 V

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 stb28nm60nd stf28nm60nd stp28nm60nd stw28nm60nd.pdf

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 typ., 23 A FDmesh II Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ 2 Order codes RDS(on) max ID 3 TJ max. 1 3 2 1 2 STB28NM60ND D PAK TO-220FP STF28NM60ND TAB 650 V 0.150 23 A STP28NM60ND STW28NM60ND 3 3 3 2 2 1 2 1 1

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 stb28n60m2 stp28n60m2 stw28n60m2.pdf

STB28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features TAB VDS @ RDS(on) Order code ID 3 TJmax max 1 3 2 1 STB28N60M2 D2PAK TO-220 STP28N60M2 650 V 0.150 22 A STW28N60M2 Extremely low gate charge 3 Excellent output capacitance (Coss) prof

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 stb28n60dm2 stp28n60dm2 stw28n60dm2.pdf

STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT T max. Jmax. STB28N60DM2 STP28N60DM2 600 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode Extremely low gate charge and input capacita

 8.7. Size:211K  inchange semiconductor
 stw28nm50n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STW28NM50N FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )