STW28NK60Z Todos los transistores

 

STW28NK60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STW28NK60Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 350 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 615 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO-247

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STW28NK60Z Datasheet (PDF)

 ..1. Size:279K  st
stw28nk60z.pdf

STW28NK60Z
STW28NK60Z

STW28NK60ZN-CHANNEL 600 V - 0.155 - 27A TO-247Zener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PWSTW28NK60Z 600 V

 8.1. Size:1114K  st
stb28n60m2 sti28n60m2 stp28n60m2 stw28n60m2.pdf

STW28NK60Z
STW28NK60Z

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in DPAK, IPAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile

 8.2. Size:1235K  st
stb28n65m2 stf28n65m2 stp28n65m2 stw28n65m2.pdf

STW28NK60Z
STW28NK60Z

STB28N65M2, STF28N65M2,STP28N65M2, STW28N65M2N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETsin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTB28N65M233STF28N65M212650 V 0.18 20 A1STP28N65M2D2PAKTO-220FPSTW28N65M2TAB Extremely low gate charge Excellent output

 8.3. Size:790K  st
stb28nm50n stf28nm50n stp28nm50n stw28nm50n.pdf

STW28NK60Z
STW28NK60Z

STB28NM50N, STF28NM50NSTP28NM50N, STW28NM50NN-channel 500 V, 0.135 , 21 A D2PAK, TO-220, TO-220FP, TO-247MDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB28NM50NTO-220TO-220FPSTF28NM50N550 V

 8.4. Size:1665K  st
stb28nm60nd stf28nm60nd stp28nm60nd stw28nm60nd.pdf

STW28NK60Z
STW28NK60Z

STB28NM60ND, STF28NM60ND,STP28NM60ND, STW28NM60NDN-channel 600 V, 0.13 typ., 23 A FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABVDS @2Order codes RDS(on) max ID3TJ max.13212STB28NM60NDD PAKTO-220FPSTF28NM60NDTAB650 V 0.150 23 ASTP28NM60NDSTW28NM60ND333221 211

 8.5. Size:1184K  st
stb28n60m2 stp28n60m2 stw28n60m2.pdf

STW28NK60Z
STW28NK60Z

STB28N60M2, STP28N60M2, STW28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataTAB FeaturesTABVDS @ RDS(on) Order code ID3TJmax max1321STB28N60M2D2PAKTO-220STP28N60M2 650 V 0.150 22 ASTW28N60M2 Extremely low gate charge3 Excellent output capacitance (Coss) prof

 8.6. Size:914K  st
stb28n60dm2 stp28n60dm2 stw28n60dm2.pdf

STW28NK60Z
STW28NK60Z

STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STB28N60DM2 STP28N60DM2 600 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode Extremely low gate charge and input capacita

 8.7. Size:211K  inchange semiconductor
stw28nm50n.pdf

STW28NK60Z
STW28NK60Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STW28NM50NFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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