2SJ532 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ532
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 100 nS
Cossⓘ - Capacitancia de salida: 800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de 2SJ532 MOSFET
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2SJ532 datasheet
..1. Size:88K renesas
2sj532.pdf 
2SJ532 Silicon P Channel MOS FET REJ03G0882-0400 (Previous ADE-208-653B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain
9.1. Size:136K toshiba
2sj537.pdf
2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSVI) 2SJ537 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.16 (typ.) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current I = -100 A (V = -50 V) DSS DS Enhancement-mode Vth = -0.8 -2.
9.2. Size:108K renesas
rej03g0880 2sj530lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:89K renesas
2sj535.pdf
2SJ535 Silicon P Channel MOS FET REJ03G0885-0400 (Previous ADE-208-627B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3.
9.4. Size:88K renesas
2sj534.pdf
2SJ534 Silicon P Channel MOS FET REJ03G0884-0500 (Previous ADE-208-589C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3.
9.5. Size:95K renesas
2sj530.pdf
2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (
9.6. Size:88K renesas
2sj533.pdf
2SJ533 Silicon P Channel MOS FET REJ03G0883-0400 (Previous ADE-208-649B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain
9.7. Size:88K renesas
2sj539.pdf
2SJ539 Silicon P Channel MOS FET REJ03G0886-0300 (Previous ADE-208-657A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange)
9.8. Size:88K renesas
2sj531.pdf
2SJ531 Silicon P Channel MOS FET REJ03G0881-0300 (Previous ADE-208-646A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain
9.9. Size:102K renesas
rej03g0885 2sj535ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.10. Size:102K renesas
rej03g0884 2sj534ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.11. Size:101K renesas
rej03g0886 2sj539ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.12. Size:1426K cn vbsemi
2sj530stl.pdf
2SJ530STL www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym
Otros transistores... 2SJ517
, 2SJ518
, 2SJ526
, 2SJ527
, 2SJ528
, 2SJ529
, 2SJ530
, 2SJ531
, IRF830
, 2SJ533
, 2SJ534
, 2SJ535
, 2SJ539
, 2SJ540
, 2SJ541
, 2SJ542
, 2SJ543
.
