STW56N65M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STW56N65M2 Datasheet (PDF)

..1. Size:724K st
stw56n65m2.pdf pdf_icon

STW56N65M2N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested32 Zener-protected1ApplicationsTO-247 Switching applicationsFigure

0.1. Size:699K st
stw56n65m2-4.pdf pdf_icon

STW56N65M2-4N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge4 Excellent output capacitance (Coss) profile 32 100% avalanche tes

6.1. Size:596K st
stw56n65dm2.pdf pdf_icon

STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre

7.1. Size:907K st
stw56n60m2-4.pdf pdf_icon

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%