MCH3382 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MCH3382
   Código: QP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 9 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.3 V
   Qgⓘ - Carga de la puerta: 2.3 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.198 Ohm
   Paquete / Cubierta: SC70 MCPH3 SOT323F

Búsqueda de reemplazo de MOSFET MCH3382

MCH3382 Datasheet (PDF)

..1. Size:281K onsemi
mch3382.pdf

Ordering number : ENA1766MCH3382P-Channel Power MOSFEThttp://onsemi.com 12V, 2A, 198m , Single MCPH3Features ON-resistance RDS(on)1=152m (typ.) 1.2V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 9 VDrain C

8.1. Size:370K sanyo
mch3383.pdf

MCH3383Ordering number : EN9000SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETLow Voltage Drive Switching DeviceMCH3383ApplicationsFeatures ON-resistance RDS(on)1=57m (typ.) 0.9V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-S

9.1. Size:379K 1
mch3375.pdf

MCH3375Ordering number : ENA0342SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3375ApplicationsFeatures ON-resistance RDS(on)1=227m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sourc

9.2. Size:40K sanyo
mch3302.pdf

Ordering number:ENN6369P-Channel Silicon MOSFETMCH3302Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 4V drive.[MCH3302]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

9.3. Size:30K sanyo
mch3317.pdf

Ordering number : ENN7222MCH3317P-Channel Silicon MOSFETMCH3317Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3317]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : DrainSpecifications1 2Absolute Maximum Ratings at Ta=25C(Top view)SANYO

9.4. Size:27K sanyo
mch3310.pdf

Ordering number : ENN6863MCH3310P-Channel Silicon MOSFETMCH3310Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 4V drive.[MCH3310]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions R

9.5. Size:27K sanyo
mch3319.pdf

Ordering number : ENN7199MCH3319P-Channel Silicon MOSFETMCH3319Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3319]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : DrainSpecifications1 2Absolute Maximum Ratings at Ta=25C(Top view)SANYO

9.6. Size:276K sanyo
mch3376.pdf

MCH3376Ordering number : ENA1564SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3376ApplicationsFeatures Low ON-resistance. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID

9.7. Size:27K sanyo
mch3309.pdf

Ordering number : ENN6910MCH3309P-Channel Silicon MOSFETMCH3309Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 2.5V drive.[MCH3309]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symb

9.8. Size:27K sanyo
mch3308.pdf

Ordering number : ENN7008MCH3308P-Channel Silicon MOSFETMCH3308Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 4V drive.[MCH3308]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter Symbol Co

9.9. Size:28K sanyo
mch3306.pdf

Ordering number : ENN6900MCH3306P-Channel Silicon MOSFETMCH3306Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 1.8V drive.[MCH3306]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions

9.10. Size:264K sanyo
mch3374.pdf

Ordering number : ENA0857 MCH3374SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETMCH3374 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS

9.11. Size:30K sanyo
mch3318.pdf

Ordering number : ENN7213MCH3318P-Channel Silicon MOSFETMCH3318Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3318]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : DrainSpecifications1 2Absolute Maximum Ratings at Ta=25C(Top view)SANYO

9.12. Size:30K sanyo
mch3301.pdf

Ordering number : ENN6431AMCH3301P-Channel Silicon MOSFETMCH3301Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON resistance. unit : mm Ultrahigh-speed switching. 2167A 2.5V drive.[MCH3301]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : Drain1 2(Top view) SANYO : MCPH3SpecificationsAbsolute Maximu

9.13. Size:66K sanyo
mch3377.pdf

Ordering number : ENA0957 MCH3377SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3377ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

9.14. Size:27K sanyo
mch3307.pdf

Ordering number : ENN7007MCH3307P-Channel Silicon MOSFETMCH3307Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 2.5V drive.[MCH3307]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter Symbol

9.15. Size:28K sanyo
mch3312.pdf

Ordering number : ENN7009MCH3312P-Channel Silicon MOSFETMCH3312Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 4V drive.[MCH3312]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH31 2SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co

9.16. Size:1015K onsemi
mch3376.pdf

Ordering number : ENA1564BMCH3376Power MOSFEThttp://onsemi.com 20V, 241m , 1.5A, Single P-ChannelFeatures ESD diode-Protected gate Drive at low voltage:1.8V drive High speed switching and Low loss Low RDS(on) Pb-free and RoHS Compliance SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sou

9.17. Size:569K onsemi
mch3374.pdf

MCH3374 Power MOSFET 12V, 70m, 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology,which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-R

9.18. Size:531K onsemi
mch3333a.pdf

MCH3333A Power MOSFET 30V, 215m, 2.0A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low

9.19. Size:1020K onsemi
mch3377.pdf

Ordering number : ENA0957BMCH3377P-Channel Power MOSFEThttp://onsemi.com 20V, 3A, 83m , Single MCPH3Features Ultrahigh-spees switching. 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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