MCH3481 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MCH3481 Power MOSFET 20V, 104m, 2A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-Resis

MCH3484Ordering number : ENA1883SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3484ApplicationsFeatures ON-resistance RDS(on)1=33m (typ.) 0.9V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Sou

MCH3486 Power MOSFET www.onsemi.com 60V, 137m, 2A, Single N-Channel Features VDSS RDS(on) Max ID MaxVDSS RDS(on) Max ID Max137 m@10V Low RDS(on) 137 m@10V60V 2A 60V 2A192 m@4.5V192 m@4.5V 4V Drive 217 m@4V 217 m@4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Small Surface Mount Package (MCPH3) Electric

MCH3476Ordering number : ENA1952SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3476ApplicationsFeatures 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID

Ordering number : ENN7997 MCH3421N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3421ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 0.8 AD

Ordering number : ENN7746 MCH3427N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3427ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID 4 ADr

Ordering number : ENA1260 MCH3477SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETMCH3477 General-Purpose Switching DeviceApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I

Ordering number : ENN7010MCH3406N-Channel Silicon MOSFETMCH3406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3406]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter S

Ordering number : ENA1000 MCH3475SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETMCH3475 General-Purpose Switching DeviceApplicationsFeatures Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID

Ordering number : ENN6864MCH3410N-Channel Silicon MOSFETMCH3410Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 4V drive.[MCH3410]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions R

MCH3479Ordering number : ENA1813SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3479ApplicationsFeatures ON-resistance RDS(on)1=49m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Sou

Ordering number : ENN6940MCH3405N-Channel Silicon MOSFETMCH3405Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 1.8V drive.[MCH3405]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions

Ordering number:ENN6443N-Channel Silicon MOSFETMCH3401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 2.5V drive.[MCH3401]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings

Ordering number : ENN6901MCH3412N-Channel Silicon MOSFETMCH3412Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resinstance. unit : mm Ultrahigh-speed switching. 2167 4V drive.[MCH3412]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions

Ordering number : ENN7011MCH3408N-Channel Silicon MOSFETMCH3408Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 4V drive.[MCH3408]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSpecifications SANYO : MCPH31 2Absolute Maximum Ratings at Ta=25CParameter Symbol Con

Ordering number : ENN6911MCH3409N-Channel Silicon MOSFETMCH3409Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 2.5V drive.[MCH3409]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symb

Ordering number:ENN6444N-Channel Silicon MOSFETMCH3402Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 4V drive.[MCH3402]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

MCH3478Ordering number : ENA1353SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3478ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 V

MCH3474Ordering number : ENA1397SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3474ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS

MCH3477 Power MOSFET www.onsemi.com 20V, 38m, 4.5A, Single N-Channel VDSS RDS(on) Max ID MaxFeatures 38 m@4.5V High Speed Switching20V 61 m@2.5V 4.5A 1.8V Drive 99 m@1.8V ESD Diode - Protected Gate Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 3Absolute Maximum R

MCH3476 Power MOSFET www.onsemi.com 20V, 125m, 2A, Single N-ChannelFeatures VDSS RDS(on) Max ID Max Low On-Resistance 125m@ 4.5V 1.8V Drive 20V 190m@ 2.5V 2A ESD Diode-Protected Gate 310m@ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Sym

MCH3475 Power MOSFET www.onsemi.com 30V, 180m, 1.8A, Single N-ChannelFeatures VDSS RDS(on) Max ID Max High Speed Switching 180m@ 10V 4V Drive 30V 1.8A 330m@ 4V Pb-Free and RoHS Compliance Halogen Free Compliance : MCH3475-TL-W Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Valu

MCH3479 Power MOSFET www.onsemi.com 20V, 64m, 3.5A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 64m@ 4.5V 1.8V Drive 20V 95m@ 2.5V 3.5A ESD Diode-Protected Gate 149m@ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter S

MCH3474 Power MOSFET 30V, 50m, 4A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max ID

MCH3409-TLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC