MCH6353 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH6353
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 48 nS
Cossⓘ - Capacitancia de salida: 160 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Encapsulados: SOT-363
MCPH6
SC88
Búsqueda de reemplazo de MCH6353 MOSFET
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MCH6353 datasheet
..1. Size:364K onsemi
mch6353.pdf 
Ordering number ENA2206 MCH6353 P-Channel Power MOSFET http //onsemi.com -12V, -6.0A, 35m , Single MCPH6 Features On-resistance RDS(on)1=29m (typ.) 1.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS -12 V Gate to Source Volta
8.1. Size:372K onsemi
mch6351.pdf
Ordering number ENA2198 MCH6351 P-Channel Power MOSFET http //onsemi.com -12V, -9A, 16.9m , Single MCPH6 Features On-resistance RDS(on)1=14m (typ.) 1.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS -12 V Gate to Source Volta
9.1. Size:268K sanyo
mch6331.pdf
Ordering number ENA1017 MCH6331 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6331 Applications Features Low ON-resistance. 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --3.5
9.2. Size:64K sanyo
mch6341.pdf
Ordering number ENA1272 MCH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6341 Applications Features Low ON-resistance. 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --5 A
9.3. Size:29K sanyo
mch6307.pdf
Ordering number ENN7080 MCH6307 P-Channel Silicon MOSFET MCH6307 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193A 1.8V drive. [MCH6307] 0.3 0.15 4 5 6 3 2 1 0.65 1 Drain 2 Drain 2.0 6 5 4 3 Gate 4 Source 5 Drain 6 Drain 1 2 3 SANYO MCPH6 Specifications
9.4. Size:485K sanyo
mch6342.pdf
MCH6342 Ordering number ENA1553 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6342 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30
9.5. Size:269K sanyo
mch6321.pdf
Ordering number ENA0963 MCH6321 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6321 Applications Features 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --4 A Drain Current (Pulse)
9.6. Size:66K sanyo
mch6336.pdf
Ordering number ENA0958 MCH6336 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6336 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)
9.7. Size:66K sanyo
mch6337.pdf
Ordering number ENA0959 MCH6337 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6337 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS
9.8. Size:342K sanyo
mch6344.pdf
MCH6344 Ordering number EN8934 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6344 Applications Features ON-resistance RDS(on)1=115m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sour
9.9. Size:27K sanyo
mch6303.pdf
Ordering number ENN6778 MCH6303 P-Channel Silicon MOSFET MCH6303 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6303] 0.3 0.15 6 5 4 1 2 3 0.65 1 Drain 2.0 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Specifications SANYO MCPH6 Absolute Maximum Ratings a
9.10. Size:28K sanyo
mch6305.pdf
Ordering number ENN6943 MCH6305 P-Channel Silicon MOSFET MCH6305 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6305] 0.3 0.15 6 5 4 1 2 3 0.65 1 Drain 2.0 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Specifications SANYO MCPH6 Absolute Maximum Ratings at
9.11. Size:265K sanyo
mch6320.pdf
Ordering number ENA0815 MCH6320 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6320 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)
9.12. Size:30K sanyo
mch6302.pdf
Ordering number ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193A 4V drive. [MCH6302] 0.3 0.15 4 5 6 3 2 1 1 Drain 0.65 2 Drain 6 5 4 2.0 3 Gate (Bottom view) 4 Source 5 Drain 6 Drain SANYO MCPH6 1 2 3 (T
9.13. Size:1060K onsemi
mch6321.pdf
Ordering number ENA0963B MCH6321 P-Channel Power MOSFET http //onsemi.com 20V, 4A, 83m , Single MCPH6 Features 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP
9.14. Size:313K onsemi
mch6337.pdf
MCH6337 Power MOSFET www.onsemi.com 20V, 49m , 4.5A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching Low Gate Drive Voltage ESD Diode-Protected Gate 1, 2, 5, 6 Pb-Free and RoHS Compliance Halogen Free Compliance MCH6337-TL-H, MCH6337-TL-W 1 Drain 3 Specifications 2 Drain 3 Gate Absolute
9.15. Size:673K onsemi
mch6344.pdf
MCH6344 Power MOSFET 30V, 150m , 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on
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