SPB100N03S2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPB100N03S2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 2450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm

Encapsulados: P-TO263-3

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SPB100N03S2 datasheet

 ..1. Size:676K  infineon
 spb100n03s2-03 spb100n03s2.pdf pdf_icon

SPB100N03S2

SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3 m Enhancement mode ID 100 A Excellent Gate Charge x RDS(on) product (FOM) P-TO263 -3 Superior thermal resistance 175 C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 Marking Type Package

 6.1. Size:312K  1
 spp100n06s2-05 spb100n06s2-05.pdf pdf_icon

SPB100N03S2

SPP100N06S2-05 SPB100N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.7 m Enhancement mode ID 100 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2-05 P- TO220 -3-1 Q67060-S6048 PN0605 SPB100N06S2-05 P- TO263 -3-2

 6.2. Size:200K  1
 spp100n08s2l-07 spb100n08s2l-07.pdf pdf_icon

SPB100N03S2

SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.5 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045 PN08L07 SPB100N0

 6.3. Size:310K  infineon
 spp100n06s2l-05 spb100n06s2l-05.pdf pdf_icon

SPB100N03S2

SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.4 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043 PN06L05 SPB100N0

MOSTRAR MÁS

Otros transistores... SP8K31FRA, SP8K33FRA, SP8K80, SP8M10FRA, SP8M21FRA, SP8M51, SP8M70, SP8M8FRA, IRLZ44N, SPB42N03S2L-13, SPB80N03S2, SPC1016, SPC1018, SPC4516, SPC4516B, SPC4527, SPC4533