SPB80N03S2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPB80N03S2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 325 nS

Cossⓘ - Capacitancia de salida: 2420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: P-TO263-3-2

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SPB80N03S2 datasheet

 ..1. Size:416K  infineon
 spb80n03s2.pdf pdf_icon

SPB80N03S2

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3.1 m Enhancement mode ID 80 A Excellent Gate Charge x RDS(on) product (FOM) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Type Pa

 0.1. Size:456K  infineon
 spi80n03s2-03 spp80n03s2-03 spb80n03s2-03.pdf pdf_icon

SPB80N03S2

www.DataSheet4U.com SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3.1 m Enhancement mode ID 80 A Excellent Gate Charge x RDS(on) product (FOM) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175 C operating temperature Avalanche rated

 7.1. Size:208K  1
 spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPB80N03S2

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.2. Size:345K  infineon
 spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPB80N03S2

www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.8 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-05 P- TO220 -3-1 Q67040-S4245 2N0605 SPB80N06S2-05

MOSTRAR MÁS

Otros transistores... SP8K80, SP8M10FRA, SP8M21FRA, SP8M51, SP8M70, SP8M8FRA, SPB100N03S2, SPB42N03S2L-13, IRF640N, SPC1016, SPC1018, SPC4516, SPC4516B, SPC4527, SPC4533, SPC4533W, SPC4539