SPC4567 Todos los transistores

 

SPC4567 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPC4567
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
   Paquete / Cubierta: SOP-8P
 

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SPC4567 Datasheet (PDF)

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SPC4567

SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

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 spc4567w.pdf pdf_icon

SPC4567

SPC4567WN & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567W is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st

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 spc4527.pdf pdf_icon

SPC4567

SPC4527 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4527 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 9.2. Size:247K  syncpower
 spc4533.pdf pdf_icon

SPC4567

SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

MOSTRAR MÁS

Otros transistores... SPC1018 , SPC4516 , SPC4516B , SPC4527 , SPC4533 , SPC4533W , SPC4539 , SPC4539B , 2SK3878 , SPC4567W , SPC5604 , SPC6332 , SPC6601 , SPC6602 , SPC6604 , SPC6605 , SPD30N03S2L-10 .

History: AP9465AGH | FDFS6N548

 

 
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