SPC6601 Todos los transistores

 

SPC6601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPC6601
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.5 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: TSOP-6P
 

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SPC6601 Datasheet (PDF)

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SPC6601

SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6601 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

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 spc6605.pdf pdf_icon

SPC6601

SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6605 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-state

 8.2. Size:238K  syncpower
 spc6602.pdf pdf_icon

SPC6601

SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6602 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.3. Size:234K  syncpower
 spc6604.pdf pdf_icon

SPC6601

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

MOSTRAR MÁS

Otros transistores... SPC4533 , SPC4533W , SPC4539 , SPC4539B , SPC4567 , SPC4567W , SPC5604 , SPC6332 , K3569 , SPC6602 , SPC6604 , SPC6605 , SPD30N03S2L-10 , SPD50N03S2-07 , SPD50N03S2L-06 , SPD50N03S2L-06T , SPI80N06S-80 .

History: IPA041N04NG | PMPB48EP | 2N7002TC | BRCS070N03DP | CJQ9435 | 2SK1524

 

 
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