SPD50N03S2-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPD50N03S2-07
Código: PN0307
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 35 nC
trⓘ - Tiempo de subida: 36 nS
Cossⓘ - Capacitancia de salida: 750 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm
Paquete / Cubierta: PG-TO252-3
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SPD50N03S2-07 Datasheet (PDF)
spd50n03s2-07 .pdf
SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307
spd50n03s2-07.pdf
SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307
spd50n03s2l-06.pdf
SPD50N03S2L-06 OptiMOS Power-TransistorFeatureProduct Summary N-ChannelVDS30 V Enhancement modeRDS(on) 6.4 m Logic LevelID 50 AP - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy
spd50n03s2l-06 spd50n03s2l-06t.pdf
SPD50N03S2L-06OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 6.4 m Enhancement modeID 50 A Logic LevelPG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSP
spd50n03s2.pdf
isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2FEATURESStatic drain-source on-resistance:RDS(on)7.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 3
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
