SPM1007 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPM1007
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 22 V
|Id|ⓘ - Corriente continua de drenaje: 29 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 106 nC
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 175 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: EPAK1
Búsqueda de reemplazo de MOSFET SPM1007
SPM1007 Datasheet (PDF)
spm1007.pdf
SENSITRON SPM1007 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: 80m typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode Very fast switching and no reverse recovery Isolated base plate Alum
spm1002.pdf
SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE FAST SWITCHING 3RD GENERATION IGBT SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT
spm1001.pdf
SPM1001 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT 600V, 22A BRAKE MOSFET INTEGRAT
spm1004.pdf
SENSITRON SPM1004 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5280, Rev. - Three-Phase IGBT BRIDGE + HIGH SIDE BRAKE IGBT DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES. AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLE CAPABILITY. LOW PROFILE L
spm1005.pdf
SPM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5287, Rev. C 600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE WITH SiC FREEWHEELING DIODE Features SiC Free wheel diode zero reverse recovery loss Isolated base plate Low thermal impedance Aluminum Nitride base Light weight low profile standard package High temperat
spm1008.pdf
SENSITRON SPM1008 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5411, REV. - 1200 VOLT, 30 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE FEATURES: 80m typical on-resistance Isolated base plate Aluminum Nitride substrate Light Weight Low Profile Standard Package High Temperature Engineering Plastic Shell Construction Schematic Diagram: MAXIMUM RATIN
spm1006.pdf
SENSITRON SPM1006 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5384, Rev. B 600 VOLT, 40 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE Features Trench stop third generation IGBT Soft, fast recovery diode for minimal EMI Isolated base plate Aluminum nitride substrate Light weight low profile standard package High temperature engineering plast
spm1003.pdf
SENSITRON SPM1003 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES. 1200 VOLT, 133 AMP INRUSH THYRISTOR (SCR). AlSiC BASE PLATE FOR HIGH
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