SPP08P06P Todos los transistores

 ..1. Size:479K  infineon
 spp08p06p spp08p06ph.pdf

SPP08P06P H SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.3 Avalanche rated Continuous drain current ID -8.8 A dv/dt rated 175 C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101

 0.1. Size:479K  1
 spp08p06ph.pdf

SPP08P06P H SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.3 Avalanche rated Continuous drain current ID -8.8 A dv/dt rated 175 C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101

 9.1. Size:488K  infineon
 spp08n80c3.pdf

SPP08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.65 DS(on)max Extreme dv/dt rated Q 45 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 9.2. Size:726K  infineon
 spp08n50c3 spi08n50c3 spp08n50c3 spi08n50c3 spa08n50c3 rev.2.91.pdf

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 9.3. Size:248K  inchange semiconductor
 spp08n50c3.pdf

isc N-Channel MOSFET Transistor SPP08N50C3 ISPP08N50C3 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM R

 9.4. Size:248K  inchange semiconductor
 spp08n80c3.pdf

isc N-Channel MOSFET Transistor SPP08N80C3 ISPP08N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABS