SPP18P06PG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP18P06PG
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 81.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18.7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.8 nS
Cossⓘ - Capacitancia de salida: 230 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: PG-TO220-3
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SPP18P06PG datasheet
spp18p06pg spp18p06ph.pdf
SPP18P06P H SIPMOS Small-Signal-Transistor Product Summary Features VDS -60 V P-Channel RDS(on),max 0.13 Enhancement mode ID -18.7 A Avalanche rated dv /dt rated PG-TO220-3-1 175 C operating temperature Pb-free lead finishing; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and reel
spp18p06pg.pdf
SPP18P06PG www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) TrenchFET Power MOSFET ID (A) Qg (Typ) 100 % UIS Tested 0.062 at VGS = - 10 V - 20 - 60 12.5 0.074 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch S TO-220AB G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter
spp18p06ph .pdf
SPP18P06P H SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.13 DS(on),max Enhancement mode I -18.7 A D Avalanche rated dv /dt rated 175 C operating temperature Pb-free lead finishing; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and reel information
Otros transistores... SPN50T10, SPN65T10, SPN80T10, SPP08P06P, SPP14N05, SPP15P10P, SPP15P10PH, SPP15P10PL, TK10A60D, SPP20N05L, SPP22N05, SPP77N05, SPP80N05, SPP80N05L, SPP80N06S-08, SPP80P06P, SPP80P06PG
History: AM4463P
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