SPP20N05L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP20N05L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 14 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO-220AB

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SPP20N05L datasheet

 ..1. Size:88K  siemens
buz101sl spp20n05l.pdf pdf_icon

SPP20N05L

BUZ 101 SL SPP20N05L SIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 SL 55 V 20 A 0.07 TO-220 AB Q67040-S4012-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain cur

 8.1. Size:611K  infineon
spp20n65c3 spa20n65c3 spi20n65c3.pdf pdf_icon

SPP20N05L

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor V 650 V DS Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconducta

 8.2. Size:129K  infineon
spp20n60s5.pdf pdf_icon

SPP20N05L

SPP20N60S5 Final data SPB20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20 A Worldwide best RDS(on) in TO 220 P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Type Package Ordering Cod

 8.3. Size:370K  infineon
spp20n60s5 .pdf pdf_icon

SPP20N05L

SPP20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge 2 Periodic avalanche rated Extreme dv/dt rated 3 2 1 Ultra low effective capacitances P-TO220-3-1 Improved transconductance Type Package Ordering Code Marking

Otros transistores... SPN65T10, SPN80T10, SPP08P06P, SPP14N05, SPP15P10P, SPP15P10PH, SPP15P10PL, SPP18P06PG, AO4407, SPP22N05, SPP77N05, SPP80N05, SPP80N05L, SPP80N06S-08, SPP80P06P, SPP80P06PG, SPR80N03