SPP80N05 Todos los transistores

 ..1. Size:88K  siemens
 buz110s spp80n05.pdf

BUZ 110 S SPP80N05 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

 0.1. Size:77K  siemens
 buz111sl spp80n05l.pdf

BUZ111SL SPP80N05L SIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

 7.1. Size:208K  1
 spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.2. Size:345K  infineon
 spp80n06s2-05 spb80n06s2-05.pdf

www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.8 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-05 P- TO220 -3-1 Q67040-S4245 2N0605 SPB80N06S2-05

 7.3. Size:311K  infineon
 spp80n06s2l-09 spb80n06s2l-09.pdf

SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8.5 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-09 P- TO220 -3-1 Q67060-S6031 2N06L09 SPB80N06S2L-09 P- TO263 -3-2

 7.4. Size:311K  infineon
 spp80n06s2l-h5 spb80n06s2l-h5.pdf

SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 5 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054 2N06LH5 SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5 Maximum Ratings, a

 7.5. Size:516K  infineon
 spb80n06s2-09 spp80n06s2-09.pdf

SPP80N06S2-09 Preliminary data SPB80N06S2-09 OptiMOS =Power-Transistor = == Product Summary Feature VDS 55 V N-Channel RDS(on) 9.1 m Enhancement mode ID 80 A 175 C operating temperature P-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-09 P-TO220-3-1 Q67060-S6025 2N0609 SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609 Maxi

 7.6. Size:456K  infineon
 spi80n03s2-03 spp80n03s2-03 spb80n03s2-03.pdf

www.DataSheet4U.com SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3.1 m Enhancement mode ID 80 A Excellent Gate Charge x RDS(on) product (FOM) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175 C operating temperature Avalanche rated

 7.7. Size:308K  infineon
 spp80n06s2l-07 spb80n06s2l-07.pdf

SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 7 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-07 P- TO220 -3-1 Q67040-S4285 2N06L07 SPB80N06S2L-07 P- TO263 -3-2 Q6

 7.8. Size:314K  infineon
 spp80n08s2l spb80n08s2l.pdf

SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.8 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N08S2L-07 P- TO220 -3-1 Q67060-S6015 2N08L07 SPB80N08S2L-

 7.9. Size:419K  infineon
 spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf

SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8 m Enhancement mode ID 80 A 175 C operating temperature P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-08 P- TO220 -3-1 Q67060-S4283 2N0608 SPB80N06S2-08 P- TO263 -

 7.10. Size:205K  infineon
 spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.11. Size:221K  infineon
 spi80n06s-80 spp80n06s-08.pdf

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.12. Size:1408K  cn vbsemi
 spp80n03s2l.pdf

SPP80N03S2L www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View