IXFX48N50Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFX48N50Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 500 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 48 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 190 nC
Tiempo de subida (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 960 pF
Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET IXFX48N50Q
IXFX48N50Q Datasheet (PDF)
ixfk48n50q ixfx48n50q ixfk44n50q ixfx44n50q.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 48N50Q 500 V 48 A 100 mPower MOSFETsIXFK/IXFX 44N50Q 500 V 44 A 120 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low QgPLUS 247TM (IXFX)High dV/dt, Low trrSymbol Test Conditions Maximum Ratings (TAB)GDVDSS TJ = 25C to 150
ixfk48n60p ixfx48n60p.pdf
IXFK 48N60P VDSS = 600 VPolarHVTM HiPerFETIXFX 48N60P ID2 = 48 APower MOSFET RDS(on) 135m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuou
ixfk44n80p ixfx44n80p.pdf
PolarTMIXFK44N80P VDSS = 800VHiperFETTMID25 = 44AIXFX44N80PPower MOSFET RDS(on) 190m N-Channel Enhancement ModeTO-264 (IXFK)Avalanche RatedFast Intrinsic DiodeGDSSymbol Test Conditions Maximum RatingsTabVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C, RGS = 1M 800 VPLUS247 (IXFX)VGSS Continuous 30
ixfk40n90p ixfx40n90p.pdf
Preliminary Technical InformationVDSS = 900VIXFK40N90PPolarTM Power MOSFETID25 = 40AIXFX40N90PHiPerFETTM RDS(on) 210m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C, RGS = 1M
ixfx44n55q.pdf
Advance Technical InformationIXFK 44N55QVDSS = 550 VHiPerFETTMIXFX 44N55QID25 = 44 APower MOSFETsRDS(on) = 120 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low QgPLUS 247TM (IXFX)High dV/dt, Low trrSymbol Test Conditions Maximum Ratings(TAB)GDVDSS TJ = 25C to 150C 550
ixfx44n60 ixfk44n60.pdf
HiPerFETTM IXFX 44N60 VDSS = 600 VIXFK 44N60 ID25 = 44 APower MOSFETsRDS(on) = 130 mWSingle MOSFET Dietrr 250 nsPLUS 247TM (IXFX)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C44 ATO-264 AA (IXFK)IDM TC = 25C, pulse width limite
ixfx44n50f ixfk44n50f.pdf
HiPerRFTM VDSS = 500VIXFK44N50FID25 = 44APower MOSFETsIXFX44N50F RDS(on) 120m F-Class: MegaHertz Switchingtrr 250nsSingle MOSFET DieTO-264 (IXFK)N-Channel Enhancement ModeAvalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrGDTabSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C
ixfk420n10t ixfx420n10t.pdf
Advance Technical InformationGigaMOSTM Trench VDSS = 100VIXFK420N10THiperFETTM ID25 = 420AIXFX420N10T RDS(on) 2.6m Power MOSFETtrr 140nsN-Channel Enhancement ModeAvalanche Rated TO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 100 V TABDSVDGR TJ = 25C
ixfx420n10t.pdf
isc N-Channel MOSFET Transistor IXFX420N10TFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV G
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