SQ4949EY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQ4949EY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 168 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SQ4949EY

SQ4949EY Datasheet (PDF)

..1. Size:251K vishay
sq4949ey.pdf

SQ4949EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.065 100 % Rg and UIS TestedID (A) per leg - 7.5 AEC-Q101 QualifiedcConfiguration Dual

9.1. Size:255K vishay
sq4946aey.pdf

SQ4946AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.040 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.055 Material categorization:For definitions of compliance please seeID (A) per leg 7www.vishay.com/d

9.2. Size:251K vishay
sq4942ey.pdf

SQ4942EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.026 100 % Rg and UIS TestedID (A) 8 AEC-Q101 QualifieddConfiguration Dual Compliant to R

9.3. Size:251K vishay
sq4940ey.pdf

SQ4940EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.055 100 % Rg and UIS TestedID (A) 7 AEC-Q101 QualifiedcConfiguration Dual Compliant to R

9.4. Size:230K vishay
sq4940aey.pdf

SQ4940AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.024 AEC-Q101 qualified dRDS(on) () at VGS = 4.5 V 0.029 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual

9.5. Size:111K vishay
sq4946ey.pdf

SQ4946EYVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60Pb-free Package with Low Thermal ResistanceAvailableRDS(on) () at VGS = 10 V 0.055RoHS*ID (A) 4.5AEC-Q101 RELIABILITYCOMPLIANTConfiguration Dual Passed all AEC-Q101 Reliability Testing Characterization OngoingD1

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: