SQD50N04-09H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQD50N04-09H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 408 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-252

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SQD50N04-09H datasheet

 ..1. Size:166K  vishay
 sqd50n04-09h.pdf pdf_icon

SQD50N04-09H

SQD50N04-09H www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single 100 % Rg and UIS Tested D AEC-Q101 Qualifiedd TO-252

 5.1. Size:158K  vishay
 sqd50n04-5m6.pdf pdf_icon

SQD50N04-09H

SQD50N04-5m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0056 AEC-Q101 Qualified ID (A) 50 100 % Rg and UIS Tested Material categorization Configuration Single For definitions of compliance please se

 5.2. Size:167K  vishay
 sqd50n04-4m5l.pdf pdf_icon

SQD50N04-09H

SQD50N04-4m5L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0035 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0042 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single

 5.3. Size:166K  vishay
 sqd50n04-5m0.pdf pdf_icon

SQD50N04-09H

SQD50N04-5m0 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.005 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D Compliant to RoHS Directive 2002/95/EC TO-252

MOSTRAR MÁS

Otros transistores... SQD40N06-14L, SQD40N10-25, SQD40P10-40L, SQD45P03-12, SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, 8N60, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L, SQD50N04-5M0, SQD50N04-5M6, SQD50N05-11L, SQD50N06-07L, SQD50N06-09L