SQD50P08-25L Todos los transistores

 

SQD50P08-25L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQD50P08-25L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 136 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 91 nC

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 356 pF

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: TO-252

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SQD50P08-25L Datasheet (PDF)

1.1. sqd50p08-28.pdf Size:194K _update

SQD50P08-25L
SQD50P08-25L

SQD50P08-28 Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 80 Definition RDS(on) () at VGS = - 10 V 0.028 • TrenchFET® Power MOSFET ID (A) - 48 • AEC-Q101 Qualifiedd Configuration Single • 100 % Rg and UIS Tested S TO-252 • Compliant to RoHS Directive 2002/95/EC G Drain

1.2. sqd50p08-25l.pdf Size:177K _update

SQD50P08-25L
SQD50P08-25L

SQD50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) - 80 • AEC-Q101 Qualifiedd RDS(on) () at VGS = - 10 V 0.025 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 4.5 V 0.031 • Material categorization: ID (A) - 50 For definitions of compliance please see Configuratio

 3.1. sqd50p04-13l.pdf Size:167K _update

SQD50P08-25L
SQD50P08-25L

SQD50P04-13L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) () at VGS = - 10 V 0.013 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 4.5 V 0.022 • Package with Low Thermal Resistance ID (A) - 50 • 100 % Rg and UIS Tested Configuration

3.2. sqd50p04-09l.pdf Size:169K _update

SQD50P08-25L
SQD50P08-25L

SQD50P04-09L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) () at VGS = - 10 V 0.0094 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 4.5 V 0.0190 • Package with Low Thermal Resistance ID (A) - 50 • 100 % Rg and UIS Tested Configuratio

 3.3. sqd50p06-15l.pdf Size:163K _update

SQD50P08-25L
SQD50P08-25L

SQD50P06-15L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) - 60 • Package with Low Thermal Resistance RDS(on) () at VGS = - 10 V 0.0155 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 4.5 V 0.0200 • AEC-Q101 Qualified ID (A) - 50 • Material categorization: Configuration

3.4. sqd50p03-07.pdf Size:170K _update

SQD50P08-25L
SQD50P08-25L

SQD50P03-07 www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) - 30 • AEC-Q101 Qualifiedd RDS(on) () at VGS = - 10 V 0.007 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 4.5 V 0.011 • Material categorization: ID (A) - 50 For definitions of compliance please see Configuration

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