2SJ535 Todos los transistores

 ..1. Size:89K  renesas
 2sj535.pdf

2SJ535 Silicon P Channel MOS FET REJ03G0885-0400 (Previous ADE-208-627B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3.

 0.1. Size:102K  renesas
 rej03g0885 2sj535ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:136K  toshiba
 2sj537.pdf

2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSVI) 2SJ537 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.16 (typ.) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current I = -100 A (V = -50 V) DSS DS Enhancement-mode Vth = -0.8 -2.

 9.2. Size:108K  renesas
 rej03g0880 2sj530lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:88K  renesas
 2sj532.pdf

2SJ532 Silicon P Channel MOS FET REJ03G0882-0400 (Previous ADE-208-653B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain

 9.4. Size:88K  renesas
 2sj534.pdf

2SJ534 Silicon P Channel MOS FET REJ03G0884-0500 (Previous ADE-208-589C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3.

 9.5. Size:95K  renesas
 2sj530.pdf

2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (

 9.6. Size:88K  renesas
 2sj533.pdf

2SJ533 Silicon P Channel MOS FET REJ03G0883-0400 (Previous ADE-208-649B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain

 9.7. Size:88K  renesas
 2sj539.pdf

2SJ539 Silicon P Channel MOS FET REJ03G0886-0300 (Previous ADE-208-657A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange)

 9.8. Size:88K  renesas
 2sj531.pdf

2SJ531 Silicon P Channel MOS FET REJ03G0881-0300 (Previous ADE-208-646A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate G 2. Drain

 9.9. Size:102K  renesas
 rej03g0884 2sj534ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:101K  renesas
 rej03g0886 2sj539ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.11. Size:1426K  cn vbsemi
 2sj530stl.pdf

2SJ530STL www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym