IXTH12N45MA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

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VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

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ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf pdf_icon

Advance Technical InformationX2-Class VDSS = 650VIXTA12N65X2Power MOSFET ID25 = 12AIXTP12N65X2 RDS(on) 300m IXTH12N65X2N-Channel Enhancement ModeTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30

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VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

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High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

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Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V

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VDSS = 1200 VIXTH 12N120ID (cont) = 12 APower MOSFET, Avalanche Rated RDS(on)= 1.4 High VoltagePreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 30 VD (TAB)VGSM Transient 40 VID25 TC = 25C12 AIDM TC = 25C, pulse width limit

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